Inductively coupled plasma etching of GaN and its effect ton electrical characteristics.

B Rong, EWJM van der Drift, RJ Reeves, WG Sloof, R Cheung

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	2917-2920
Number of pages	4
Journal	Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures
Volume	19
Publication status	Published - 2001

25% FCM, 75% DIMES

Keywords

@article{72c5c7045e3e40eea36cd8b5222262fc,

title = "Inductively coupled plasma etching of GaN and its effect ton electrical characteristics.",

keywords = "ZX Int.klas.verslagjaar < 2002",

author = "B Rong and {van der Drift}, EWJM and RJ Reeves and WG Sloof and R Cheung",

note = "25% FCM, 75% DIMES",

year = "2001",

language = "Undefined/Unknown",

volume = "19",

pages = "2917--2920",

journal = "Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

}

TY - JOUR

T1 - Inductively coupled plasma etching of GaN and its effect ton electrical characteristics.

AU - Rong, B

AU - van der Drift, EWJM

AU - Reeves, RJ

AU - Sloof, WG

AU - Cheung, R

N1 - 25% FCM, 75% DIMES

PY - 2001

Y1 - 2001

KW - ZX Int.klas.verslagjaar < 2002

M3 - Article

VL - 19

SP - 2917

EP - 2920

JO - Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures

SN - 1071-1023

ER -