Inductively coupled plasma etching of GaN and its effect ton electrical characteristics.

B Rong, EWJM van der Drift, RJ Reeves, WG Sloof, R Cheung

Research output: Contribution to journalArticleScientificpeer-review

24 Citations (Scopus)
Original languageUndefined/Unknown
Pages (from-to)2917-2920
Number of pages4
JournalJournal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures
Publication statusPublished - 2001

Bibliographical note

25% FCM, 75% DIMES


  • ZX Int.klas.verslagjaar < 2002

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