TY - JOUR
T1 - Industrially viable diffused IBC solar cells using APCVD dopant glass layers
AU - Kuruganti, Vaibhav V.
AU - Wurmbrand, Daniel
AU - Buck, Thomas
AU - Seren, Sven
AU - Zeman, Miro
AU - Isabella, Olindo
AU - Geml, Fabian
AU - Plagwitz, Heiko
AU - Terheiden, Barbara
AU - Mihailetchi, Valentin D.
N1 - Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
PY - 2023
Y1 - 2023
N2 - Even though interdigitated back contact (IBC) architecture produces the most efficient solar cells, it is difficult to make them cost-effective and industrially viable. Therefore, single-sided atmospheric pressure chemical vapor deposition (APCVD) is investigated for the fabrication of IBC solar cells because it reduces the overall thermal budget, simplifies wet bench processing, and requires no additional masking layer. For the fabrication of a full APCVD IBC solar cell, a very lightly doped front surface field (FSF) of 650 Ω/sq, a heavier doped back surface field (BSF) of 100 Ω/sq and a moderately doped emitter of 250 Ω/sq was used. The high-temperature annealing step is partially done in an oxygen (O2) environment to (i) drive in dopants, (ii) prevent the formation of a boron-rich layer in case of p+ doped c-Si, and (iii) grow an in-situ SiO2 at the Si/dopant glass interface. The etch rate difference between the in-situ grown SiO2 and the doped glass layer is utilized to etch the doped glass completely. The retained in-situ SiO2 after etching is capped with plasma-enhanced chemical vapor deposited (PECVD) SiNx for the passivation of both polarities of IBC solar cells. A full APCVD IBC solar cell precursors (i.e. before metallization) obtained implied open-circuit voltage (iVoc) of 714 mV and emitter saturation current density (J0s) of 17 fA/cm2. At the device level, a full APCVD IBC solar cell achieved a conversion efficiency of 22.8% with Voc of 696 mV and short-circuit current density JSC of 41.3 mA/cm2. These parameters are comparable to the commercially available full-tube diffused ZEBRA® IBC solar cells.
AB - Even though interdigitated back contact (IBC) architecture produces the most efficient solar cells, it is difficult to make them cost-effective and industrially viable. Therefore, single-sided atmospheric pressure chemical vapor deposition (APCVD) is investigated for the fabrication of IBC solar cells because it reduces the overall thermal budget, simplifies wet bench processing, and requires no additional masking layer. For the fabrication of a full APCVD IBC solar cell, a very lightly doped front surface field (FSF) of 650 Ω/sq, a heavier doped back surface field (BSF) of 100 Ω/sq and a moderately doped emitter of 250 Ω/sq was used. The high-temperature annealing step is partially done in an oxygen (O2) environment to (i) drive in dopants, (ii) prevent the formation of a boron-rich layer in case of p+ doped c-Si, and (iii) grow an in-situ SiO2 at the Si/dopant glass interface. The etch rate difference between the in-situ grown SiO2 and the doped glass layer is utilized to etch the doped glass completely. The retained in-situ SiO2 after etching is capped with plasma-enhanced chemical vapor deposited (PECVD) SiNx for the passivation of both polarities of IBC solar cells. A full APCVD IBC solar cell precursors (i.e. before metallization) obtained implied open-circuit voltage (iVoc) of 714 mV and emitter saturation current density (J0s) of 17 fA/cm2. At the device level, a full APCVD IBC solar cell achieved a conversion efficiency of 22.8% with Voc of 696 mV and short-circuit current density JSC of 41.3 mA/cm2. These parameters are comparable to the commercially available full-tube diffused ZEBRA® IBC solar cells.
UR - http://www.scopus.com/inward/record.url?scp=85142710508&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2022.112111
DO - 10.1016/j.solmat.2022.112111
M3 - Article
AN - SCOPUS:85142710508
SN - 0927-0248
VL - 251
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
M1 - 112111
ER -