Infinite-layer copper-oxide laser-ablated thin films: Substrate, buffer-layer, and processing effects

J. T. Markert; T. C. Messina; B. Dam; J. Huijbregste; J. H. Rector; R. Griessen

doi:10.1109/TASC.2003.811956

Infinite-layer copper-oxide laser-ablated thin films: Substrate, buffer-layer, and processing effects

J. T. Markert^*, T. C. Messina, B. Dam, J. Huijbregste, J. H. Rector, R. Griessen

^*Corresponding author for this work

ChemE/Chemical Engineering

Research output: Contribution to journal › Conference article › Scientific › peer-review

5 Citations (Scopus)

Abstract

Laser-ablation studies of highly-oriented thin films of the electon-doped infinite-layer copper-oxide compounds Sr_{1 - x}CuO₂ are reported. We observe significant variations in film properties with substrate or buffer layer material. X-ray diffraction, atomic force microscopy (AFM), Rutherford back-scattering (RBS), and electrical resistivity were used to characterize the films. Films were deposited on strontium titanate (001) or on buffer layers of T′-phase copper oxides (Ln₂CuO₄ with Ln = Pr, Nd, Sm), Sr₃FeNb₂O₉, and La_1.8Y_0.2CuO₄ on SrTiO₃ (001). The in-plane lattice constants of such buffer layers (a = 0.390-0.400 nm) should provide the bond tension required for electron doping. Extremely flat, epitaxial buffer layers with X-ray rocking curves as narrow as 0.08° were obtained from stoichiometric targets of Ln₂CuO₄; the other buffer layers yielded poor epitaxy. A linear dependence of infinite-layer c-axis plane spacing on substrate or buffer-layer in-plane a-axis lattice constant is observed.

Original language	English
Pages (from-to)	2684-2686
Number of pages	3
Journal	IEEE Transactions on Applied Superconductivity
Volume	13
Issue number	2 III
DOIs	https://doi.org/10.1109/TASC.2003.811956
Publication status	Published - Jun 2003
Event	2002 Applied Superconductivity Conference - Houston, TX, United States Duration: 4 Aug 2002 → 9 Aug 2002

Bibliographical note

Funding Information:
Manuscript received August 5, 2002. This work was supported in part by the National Science Foundation (NSF) under Grant DMR-9705414, in part by the Robert A. Welch Foundation under Grant F-1191, in part by the Texas Center for Superconductivity at the University of Houston under Grant K-1-50052, and in part by the Fundamenteel Onderzoek der Materie/Nederlands Wetenschappelijk Onderzoek (FOM/NWO).

Keywords

Buffer layer
Copper oxide
Infinite layer
Laser ablation

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10.1109/TASC.2003.811956

Cite this

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title = "Infinite-layer copper-oxide laser-ablated thin films: Substrate, buffer-layer, and processing effects",

abstract = "Laser-ablation studies of highly-oriented thin films of the electon-doped infinite-layer copper-oxide compounds Sr1 - xCuO2 are reported. We observe significant variations in film properties with substrate or buffer layer material. X-ray diffraction, atomic force microscopy (AFM), Rutherford back-scattering (RBS), and electrical resistivity were used to characterize the films. Films were deposited on strontium titanate (001) or on buffer layers of T′-phase copper oxides (Ln2CuO4 with Ln = Pr, Nd, Sm), Sr3FeNb2O9, and La1.8Y0.2CuO4 on SrTiO3 (001). The in-plane lattice constants of such buffer layers (a = 0.390-0.400 nm) should provide the bond tension required for electron doping. Extremely flat, epitaxial buffer layers with X-ray rocking curves as narrow as 0.08° were obtained from stoichiometric targets of Ln2CuO4; the other buffer layers yielded poor epitaxy. A linear dependence of infinite-layer c-axis plane spacing on substrate or buffer-layer in-plane a-axis lattice constant is observed.",

keywords = "Buffer layer, Copper oxide, Infinite layer, Laser ablation",

author = "Markert, {J. T.} and Messina, {T. C.} and B. Dam and J. Huijbregste and Rector, {J. H.} and R. Griessen",

note = "Funding Information: Manuscript received August 5, 2002. This work was supported in part by the National Science Foundation (NSF) under Grant DMR-9705414, in part by the Robert A. Welch Foundation under Grant F-1191, in part by the Texas Center for Superconductivity at the University of Houston under Grant K-1-50052, and in part by the Fundamenteel Onderzoek der Materie/Nederlands Wetenschappelijk Onderzoek (FOM/NWO).; 2002 Applied Superconductivity Conference ; Conference date: 04-08-2002 Through 09-08-2002",

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AU - Markert, J. T.

AU - Messina, T. C.

AU - Dam, B.

AU - Huijbregste, J.

AU - Rector, J. H.

AU - Griessen, R.

N1 - Funding Information: Manuscript received August 5, 2002. This work was supported in part by the National Science Foundation (NSF) under Grant DMR-9705414, in part by the Robert A. Welch Foundation under Grant F-1191, in part by the Texas Center for Superconductivity at the University of Houston under Grant K-1-50052, and in part by the Fundamenteel Onderzoek der Materie/Nederlands Wetenschappelijk Onderzoek (FOM/NWO).

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N2 - Laser-ablation studies of highly-oriented thin films of the electon-doped infinite-layer copper-oxide compounds Sr1 - xCuO2 are reported. We observe significant variations in film properties with substrate or buffer layer material. X-ray diffraction, atomic force microscopy (AFM), Rutherford back-scattering (RBS), and electrical resistivity were used to characterize the films. Films were deposited on strontium titanate (001) or on buffer layers of T′-phase copper oxides (Ln2CuO4 with Ln = Pr, Nd, Sm), Sr3FeNb2O9, and La1.8Y0.2CuO4 on SrTiO3 (001). The in-plane lattice constants of such buffer layers (a = 0.390-0.400 nm) should provide the bond tension required for electron doping. Extremely flat, epitaxial buffer layers with X-ray rocking curves as narrow as 0.08° were obtained from stoichiometric targets of Ln2CuO4; the other buffer layers yielded poor epitaxy. A linear dependence of infinite-layer c-axis plane spacing on substrate or buffer-layer in-plane a-axis lattice constant is observed.

AB - Laser-ablation studies of highly-oriented thin films of the electon-doped infinite-layer copper-oxide compounds Sr1 - xCuO2 are reported. We observe significant variations in film properties with substrate or buffer layer material. X-ray diffraction, atomic force microscopy (AFM), Rutherford back-scattering (RBS), and electrical resistivity were used to characterize the films. Films were deposited on strontium titanate (001) or on buffer layers of T′-phase copper oxides (Ln2CuO4 with Ln = Pr, Nd, Sm), Sr3FeNb2O9, and La1.8Y0.2CuO4 on SrTiO3 (001). The in-plane lattice constants of such buffer layers (a = 0.390-0.400 nm) should provide the bond tension required for electron doping. Extremely flat, epitaxial buffer layers with X-ray rocking curves as narrow as 0.08° were obtained from stoichiometric targets of Ln2CuO4; the other buffer layers yielded poor epitaxy. A linear dependence of infinite-layer c-axis plane spacing on substrate or buffer-layer in-plane a-axis lattice constant is observed.

KW - Buffer layer

KW - Copper oxide

KW - Infinite layer

KW - Laser ablation

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JO - IEEE Transactions on Applied Superconductivity

JF - IEEE Transactions on Applied Superconductivity

IS - 2 III

Y2 - 4 August 2002 through 9 August 2002

ER -

Infinite-layer copper-oxide laser-ablated thin films: Substrate, buffer-layer, and processing effects

Abstract

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Keywords

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