Influence of deposition parameter and temperature on stress and strain of in-situ doped PECVD silicon carbide

HMT Pham, CR de Boer, PM Sarro

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientific

Original languageUndefined/Unknown
Title of host publicationICSCRM2001: proceedings
Place of PublicationS.l.
Publishers.n.
Pages153-154
Number of pages2
Publication statusPublished - 2001
EventInternational Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan - S.l.
Duration: 28 Oct 20012 Nov 2001

Publication series

Name
PublisherS.n.

Conference

ConferenceInternational Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan
Period28/10/012/11/01

Keywords

  • ZX Int.klas.verslagjaar < 2002

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