Hydrogenated amorphous silicon (a-Si:H) films are grown at different hydrogen dilutions. For high dilutions we observe a discrepancy in the surface roughness analysis between real-time spectroscopic ellipsometry (RTSE) and atomic force microscopy (AFM) measurements. With RTSE a much higher roughness layer thickness is measured than with AFM. Additionally we observe what appears to be a strong roughening phase in the first 30-50 nm of film growth for all conditions. A mechanism that involves the formations of a hydrogenrich overlayer and etching of higher hydrides in this overlayer is suggested.
|Number of pages||4|
|Journal||Physica Status Solidi. C: Current Topics in Solid State Physics|
|Publication status||Published - 2010|
- professional journal papers
- Vakpubl., Overig wet. > 3 pag