Influence of hydrogen dilution on surface roughness development of a-Si:H thin films grown by remote plasma deposition

MA Wank, A Illiberi, FD Tichelaar, RACMM van Swaaij, MCM van de Sanden, M Zeman

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

Hydrogenated amorphous silicon (a-Si:H) films are grown at different hydrogen dilutions. For high dilutions we observe a discrepancy in the surface roughness analysis between real-time spectroscopic ellipsometry (RTSE) and atomic force microscopy (AFM) measurements. With RTSE a much higher roughness layer thickness is measured than with AFM. Additionally we observe what appears to be a strong roughening phase in the first 30-50 nm of film growth for all conditions. A mechanism that involves the formations of a hydrogenrich overlayer and etching of higher hydrides in this overlayer is suggested.
Original languageEnglish
Pages (from-to)571-574
Number of pages4
JournalPhysica Status Solidi. C: Current Topics in Solid State Physics
Volume7
Issue number3-4
DOIs
Publication statusPublished - 2010

Keywords

  • professional journal papers
  • Vakpubl., Overig wet. > 3 pag

Fingerprint Dive into the research topics of 'Influence of hydrogen dilution on surface roughness development of a-Si:H thin films grown by remote plasma deposition'. Together they form a unique fingerprint.

Cite this