Influence of hydrogen dilution on surface roughness development of a-Si:H thin films grown by remote plasma deposition

MA Wank; A Illiberi; FD Tichelaar; RACMM van Swaaij; MCM van de Sanden; M Zeman

doi:doi:10.1002/pssc.200982835

Influence of hydrogen dilution on surface roughness development of a-Si:H thin films grown by remote plasma deposition

MA Wank, A Illiberi, FD Tichelaar, RACMM van Swaaij, MCM van de Sanden, M Zeman

Photovoltaic Materials and Devices

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Abstract

Hydrogenated amorphous silicon (a-Si:H) films are grown at different hydrogen dilutions. For high dilutions we observe a discrepancy in the surface roughness analysis between real-time spectroscopic ellipsometry (RTSE) and atomic force microscopy (AFM) measurements. With RTSE a much higher roughness layer thickness is measured than with AFM. Additionally we observe what appears to be a strong roughening phase in the first 30-50 nm of film growth for all conditions. A mechanism that involves the formations of a hydrogenrich overlayer and etching of higher hydrides in this overlayer is suggested.

Original language	English
Pages (from-to)	571-574
Number of pages	4
Journal	Physica Status Solidi. C: Current Topics in Solid State Physics
Volume	7
Issue number	3-4
DOIs	https://doi.org/doi:10.1002/pssc.200982835
Publication status	Published - 2010

Keywords

professional journal papers
Vakpubl., Overig wet. > 3 pag

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doi:10.1002/pssc.200982835

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title = "Influence of hydrogen dilution on surface roughness development of a-Si:H thin films grown by remote plasma deposition",

abstract = "Hydrogenated amorphous silicon (a-Si:H) films are grown at different hydrogen dilutions. For high dilutions we observe a discrepancy in the surface roughness analysis between real-time spectroscopic ellipsometry (RTSE) and atomic force microscopy (AFM) measurements. With RTSE a much higher roughness layer thickness is measured than with AFM. Additionally we observe what appears to be a strong roughening phase in the first 30-50 nm of film growth for all conditions. A mechanism that involves the formations of a hydrogenrich overlayer and etching of higher hydrides in this overlayer is suggested.",

keywords = "professional journal papers, Vakpubl., Overig wet. > 3 pag",

author = "MA Wank and A Illiberi and FD Tichelaar and {van Swaaij}, RACMM and {van de Sanden}, MCM and M Zeman",

year = "2010",

doi = "doi:10.1002/pssc.200982835",

language = "English",

volume = "7",

pages = "571--574",

journal = "Physica Status Solidi. C: Current Topics in Solid State Physics",

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TY - JOUR

T1 - Influence of hydrogen dilution on surface roughness development of a-Si:H thin films grown by remote plasma deposition

AU - Wank, MA

AU - Illiberi, A

AU - Tichelaar, FD

AU - van Swaaij, RACMM

AU - van de Sanden, MCM

AU - Zeman, M

PY - 2010

Y1 - 2010

N2 - Hydrogenated amorphous silicon (a-Si:H) films are grown at different hydrogen dilutions. For high dilutions we observe a discrepancy in the surface roughness analysis between real-time spectroscopic ellipsometry (RTSE) and atomic force microscopy (AFM) measurements. With RTSE a much higher roughness layer thickness is measured than with AFM. Additionally we observe what appears to be a strong roughening phase in the first 30-50 nm of film growth for all conditions. A mechanism that involves the formations of a hydrogenrich overlayer and etching of higher hydrides in this overlayer is suggested.

AB - Hydrogenated amorphous silicon (a-Si:H) films are grown at different hydrogen dilutions. For high dilutions we observe a discrepancy in the surface roughness analysis between real-time spectroscopic ellipsometry (RTSE) and atomic force microscopy (AFM) measurements. With RTSE a much higher roughness layer thickness is measured than with AFM. Additionally we observe what appears to be a strong roughening phase in the first 30-50 nm of film growth for all conditions. A mechanism that involves the formations of a hydrogenrich overlayer and etching of higher hydrides in this overlayer is suggested.

KW - professional journal papers

KW - Vakpubl., Overig wet. > 3 pag

U2 - doi:10.1002/pssc.200982835

DO - doi:10.1002/pssc.200982835

M3 - Article

SN - 1862-6351

VL - 7

SP - 571

EP - 574

JO - Physica Status Solidi. C: Current Topics in Solid State Physics

JF - Physica Status Solidi. C: Current Topics in Solid State Physics

IS - 3-4

ER -

Influence of hydrogen dilution on surface roughness development of a-Si:H thin films grown by remote plasma deposition

Abstract

Keywords

UN SDGs

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