Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

RWI de Boer, NN Iosad, AF Stassen, TM Klapwijk, AF Morpurgo

Research output: Contribution to journal › Article › Scientific › peer-review

Keywords

@article{448755bf1ae54404a50ddcf34387a54d,

title = "Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors",

keywords = "academic journal papers, ZX CWTS 1.00 <= JFIS < 3.00",

author = "{de Boer}, RWI and NN Iosad and AF Stassen and TM Klapwijk and AF Morpurgo",

year = "2005",

language = "Undefined/Unknown",

volume = "86",

pages = "032103--1--032103--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

AU - de Boer, RWI

AU - Iosad, NN

AU - Stassen, AF

AU - Klapwijk, TM

AU - Morpurgo, AF

PY - 2005

Y1 - 2005

KW - academic journal papers

KW - ZX CWTS 1.00 <= JFIS < 3.00

M3 - Article

SN - 0003-6951

VL - 86

SP - 032103-1-032103-3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -