Influence of the Magnetic's parasitic capacitance in the switching of high-voltage cascode GaN HEMT

N. Galanos, J. Popovic, J. A. Ferreira, M. Gerber

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Abstract

In this paper, the influence of the parasitic capacitance of a magnetic component (inductor or transformer) on the switching of 600V cascode GaN HEMT devices is investigated. An analytical switching model is used to analyse the influence and the results are verified by means of an experimental double pulse tester setup. Furthermore, the influence of replacing the diode of the switching cell with an active GaN HEMT switch is analysed in combination with the parasitic capacitance of the magnetic component.
Original languageEnglish
Title of host publicationCIPS 2016 - 9th International Conference on Integrated Power Electronics Systems
Place of PublicationBerlin, Offenbach
PublisherVDE Verlag GMBH
Number of pages6
Volume148
ISBN (Electronic)9783800741717
Publication statusPublished - 2019
Event9th International Conference on Integrated Power Electronics Systems, CIPS 2016: 9th International Conference on Integrated Power Electronics Systems - Nuremberg, Germany
Duration: 8 Mar 201610 Mar 2016

Publication series

NameCIPS 2016 - 9th International Conference on Integrated Power Electronics Systems

Conference

Conference9th International Conference on Integrated Power Electronics Systems, CIPS 2016
CountryGermany
CityNuremberg
Period8/03/1610/03/16

Keywords

  • Cascode configuration
  • Double-pulse tester (DPT)
  • Gallium Nitride (GaN) high electron mobility transistor (HEMT)
  • Parasitic capacitance

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