TY - JOUR
T1 - InSb Nanowires with Built-In GaxIn1-xSb Tunnel Barriers for Majorana Devices
AU - Car, Diana
AU - Conesa-Boj, Sonia
AU - Zhang, H.
AU - Op Het Veld, Roy L.M.
AU - De Moor, Michiel W.A.
AU - Fadaly, Elham M.T.
AU - Gül, Önder
AU - Kölling, Sebastian
AU - Plissard, Sebastien R.
AU - Toresen, Vigdis
AU - Wimmer, M.T.
AU - Watanabe, Kenji
AU - Taniguchi, Takashi
AU - Kouwenhoven, Leo P.
AU - Bakkers, Erik P.A.M.
PY - 2017/2/8
Y1 - 2017/2/8
N2 - Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of GaxIn1-xSb within an InSb nanowire. By varying the precursor molar fraction and the growth time, we accurately control the composition and the length of the barriers. The height and the width of the GaxIn1-xSb tunnel barrier are extracted from the Wentzel-Kramers-Brillouin (WKB) fits to the experimental I-V traces.
AB - Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of GaxIn1-xSb within an InSb nanowire. By varying the precursor molar fraction and the growth time, we accurately control the composition and the length of the barriers. The height and the width of the GaxIn1-xSb tunnel barrier are extracted from the Wentzel-Kramers-Brillouin (WKB) fits to the experimental I-V traces.
KW - axial heterostructure
KW - band engineering
KW - indium antimonide
KW - Semiconductor nanowire
KW - strain mapping
KW - tunnel barrier
UR - http://www.scopus.com/inward/record.url?scp=85011971589&partnerID=8YFLogxK
U2 - 10.1021/acs.nanolett.6b03835
DO - 10.1021/acs.nanolett.6b03835
M3 - Article
AN - SCOPUS:85011971589
SN - 1530-6984
VL - 17
SP - 721
EP - 727
JO - Nano Letters: a journal dedicated to nanoscience and nanotechnology
JF - Nano Letters: a journal dedicated to nanoscience and nanotechnology
IS - 2
ER -