Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

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Abstract

The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a low-voltage SiC technology for integrated circuits is of paramount importance. Here, we report on a scalable and open state-of-the-art SiC CMOS technology that addresses this need. An overview of technology parameters, including MOSFET threshold voltage, subthreshold slope, slope factor, and process transconductance, is reported. Conventional integrated digital and analog circuits, ranging from inverters to a 2-bit analog-to-digital converter, are reported. First yield predictions for both analog and digital circuits show great potential for increasing the amount of integrated devices in future applications.

Original languageEnglish
Article number9614653
Pages (from-to)4-10
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume69
Issue number1
DOIs
Publication statusPublished - 2022

Bibliographical note

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care

Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

  • 4H-SiC
  • integrated SiC electronics
  • silicon carbide
  • silicon carbide CMOS
  • wide bandgap

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