Integrated High Performance (100) and (110) Oriented Single-Grain Si TFTs without Seed Substrate

T Chen; R Ishihara; J van der Cingel; A Baiano; MR Tajari Mofrad; H Schellevis; CIM Beenakker

Integrated High Performance (100) and (110) Oriented Single-Grain Si TFTs without Seed Substrate

T Chen
, R Ishihara
, J van der Cingel
, A Baiano
, MR Tajari Mofrad
, H Schellevis
, CIM Beenakker

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

5 Citations (Scopus)

Original language	Undefined/Unknown
Title of host publication	2009 International Electron Devices Meeting (IEDM 2009)
Editors	V Subramanian, M Ieong, K Ishimaru
Place of Publication	Baltimore, MD, USA
Publisher	IEEE
Pages	179-182
Number of pages	4
ISBN (Print)	978-1-4244-5640-6
Publication status	Published - 2009
Event	2009 International Electron Devices Meeting (IEDM 2009) - Baltimore, MD, USA Duration: 7 Dec 2009 → 9 Dec 2009

Publication series

Name
Publisher	IEEE

Conference

Conference	2009 International Electron Devices Meeting (IEDM 2009)
Period	7/12/09 → 9/12/09

Keywords

Conf.proc. > 3 pag

Cite this

@inproceedings{23c0e3c4505d451d96b7eac2f0c19b4b,

title = "Integrated High Performance (100) and (110) Oriented Single-Grain Si TFTs without Seed Substrate",

keywords = "Conf.proc. > 3 pag",

author = "T Chen and R Ishihara and \{van der Cingel\}, J and A Baiano and \{Tajari Mofrad\}, MR and H Schellevis and CIM Beenakker",

year = "2009",

language = "Undefined/Unknown",

isbn = "978-1-4244-5640-6",

publisher = "IEEE",

pages = "179--182",

editor = "V Subramanian and M Ieong and K Ishimaru",

booktitle = "2009 International Electron Devices Meeting (IEDM 2009)",

address = "United States",

note = "2009 International Electron Devices Meeting (IEDM 2009) ; Conference date: 07-12-2009 Through 09-12-2009",

}

Chen, T, Ishihara, R , van der Cingel, J, Baiano, A, Tajari Mofrad, MR, Schellevis, H & Beenakker, CIM 2009, Integrated High Performance (100) and (110) Oriented Single-Grain Si TFTs without Seed Substrate. in V Subramanian, M Ieong & K Ishimaru (eds), 2009 International Electron Devices Meeting (IEDM 2009). IEEE, Baltimore, MD, USA, pp. 179-182, 2009 International Electron Devices Meeting (IEDM 2009), 7/12/09.

Integrated High Performance (100) and (110) Oriented Single-Grain Si TFTs without Seed Substrate. / Chen, T; Ishihara, R ; van der Cingel, J et al.
2009 International Electron Devices Meeting (IEDM 2009). ed. / V Subramanian; M Ieong; K Ishimaru. Baltimore, MD, USA: IEEE, 2009. p. 179-182.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Integrated High Performance (100) and (110) Oriented Single-Grain Si TFTs without Seed Substrate

AU - Chen, T

AU - Ishihara, R

AU - van der Cingel, J

AU - Baiano, A

AU - Tajari Mofrad, MR

AU - Schellevis, H

AU - Beenakker, CIM

PY - 2009

Y1 - 2009

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SN - 978-1-4244-5640-6

SP - 179

EP - 182

BT - 2009 International Electron Devices Meeting (IEDM 2009)

A2 - Subramanian, V

A2 - Ieong, M

A2 - Ishimaru, K

PB - IEEE

CY - Baltimore, MD, USA

T2 - 2009 International Electron Devices Meeting (IEDM 2009)

Y2 - 7 December 2009 through 9 December 2009

ER -