Integrated impedance bridge for absolute capacitance measurements at cryogenic temperatures and finite magnetic fields

G. J. Verbiest; H. Janssen; D. Xu; X. Ge; M. Goldsche; J. Sonntag; T. Khodkov; L. Banszerus; N. Von Den Driesch; null More Authors

doi:10.1063/1.5089207

Integrated impedance bridge for absolute capacitance measurements at cryogenic temperatures and finite magnetic fields

G. J. Verbiest, H. Janssen, D. Xu, X. Ge, M. Goldsche, J. Sonntag, T. Khodkov, L. Banszerus, N. Von Den Driesch, More Authors

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Abstract

We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board containing the device under test and thereby parallel to the magnetic field. The measured amplitude and phase of the output signal allows for the separation of the total impedance into an absolute capacitance and a resistance. Through a detailed noise characterization, we find that the best resolution is obtained when operating the HEMT amplifier at the highest gain. We obtained a resolution in the absolute capacitance of 6.4 aF/Hz at 77 K on a comb-drive actuator while maintaining a small excitation amplitude of 15 k_BT/e. We show the magnetic field functionality of our impedance bridge by measuring the quantum Hall plateaus of a top-gated hBN/graphene/hBN heterostructure at 60 mK with a probe signal of 12.8 k_BT/e.

Original language	English
Article number	084706
Number of pages	8
Journal	Review of Scientific Instruments
Volume	90
Issue number	8
DOIs	https://doi.org/10.1063/1.5089207
Publication status	Published - 2019

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10.1063/1.5089207

1.5089207Final published version, 2.79 MBLicence: CC BY

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title = "Integrated impedance bridge for absolute capacitance measurements at cryogenic temperatures and finite magnetic fields",

abstract = "We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board containing the device under test and thereby parallel to the magnetic field. The measured amplitude and phase of the output signal allows for the separation of the total impedance into an absolute capacitance and a resistance. Through a detailed noise characterization, we find that the best resolution is obtained when operating the HEMT amplifier at the highest gain. We obtained a resolution in the absolute capacitance of 6.4 aF/Hz at 77 K on a comb-drive actuator while maintaining a small excitation amplitude of 15 kBT/e. We show the magnetic field functionality of our impedance bridge by measuring the quantum Hall plateaus of a top-gated hBN/graphene/hBN heterostructure at 60 mK with a probe signal of 12.8 kBT/e.",

author = "Verbiest, {G. J.} and H. Janssen and D. Xu and X. Ge and M. Goldsche and J. Sonntag and T. Khodkov and L. Banszerus and {Von Den Driesch}, N. and {More Authors}",

year = "2019",

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TY - JOUR

T1 - Integrated impedance bridge for absolute capacitance measurements at cryogenic temperatures and finite magnetic fields

AU - Verbiest, G. J.

AU - Janssen, H.

AU - Xu, D.

AU - Ge, X.

AU - Goldsche, M.

AU - Sonntag, J.

AU - Khodkov, T.

AU - Banszerus, L.

AU - Von Den Driesch, N.

AU - More Authors, null

PY - 2019

Y1 - 2019

N2 - We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board containing the device under test and thereby parallel to the magnetic field. The measured amplitude and phase of the output signal allows for the separation of the total impedance into an absolute capacitance and a resistance. Through a detailed noise characterization, we find that the best resolution is obtained when operating the HEMT amplifier at the highest gain. We obtained a resolution in the absolute capacitance of 6.4 aF/Hz at 77 K on a comb-drive actuator while maintaining a small excitation amplitude of 15 kBT/e. We show the magnetic field functionality of our impedance bridge by measuring the quantum Hall plateaus of a top-gated hBN/graphene/hBN heterostructure at 60 mK with a probe signal of 12.8 kBT/e.

AB - We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board containing the device under test and thereby parallel to the magnetic field. The measured amplitude and phase of the output signal allows for the separation of the total impedance into an absolute capacitance and a resistance. Through a detailed noise characterization, we find that the best resolution is obtained when operating the HEMT amplifier at the highest gain. We obtained a resolution in the absolute capacitance of 6.4 aF/Hz at 77 K on a comb-drive actuator while maintaining a small excitation amplitude of 15 kBT/e. We show the magnetic field functionality of our impedance bridge by measuring the quantum Hall plateaus of a top-gated hBN/graphene/hBN heterostructure at 60 mK with a probe signal of 12.8 kBT/e.

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SN - 0034-6748

VL - 90

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 8

M1 - 084706

ER -

Integrated impedance bridge for absolute capacitance measurements at cryogenic temperatures and finite magnetic fields

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