Abstract
In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like Optical
Coherence Tomography.
Coherence Tomography.
Original language | English |
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Title of host publication | Proceedings of Eurosensors 2017 |
Pages | 1-5 |
Number of pages | 5 |
DOIs | |
Publication status | Published - 2017 |
Event | Eurosensors 2017: 31st Conference - Paris, France Duration: 3 Sep 2017 → 6 Sep 2017 Conference number: 31 http://www.eurosensors2017.eu/ |
Publication series
Name | Proceedings |
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Publisher | MDPI |
Number | 4 |
Volume | 1 |
ISSN (Print) | 2504-3900 |
Conference
Conference | Eurosensors 2017 |
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Country/Territory | France |
City | Paris |
Period | 3/09/17 → 6/09/17 |
Internet address |
Keywords
- Si photonics
- SiGe detectors
- optical coherence tomography