Integrated SiGe Detectors for Si Photonic Sensor Platforms

Grégory Pandraud; Silvana Milosavljevic; Amir Sammak; Matteo Cherchi; Aleksandar Jovic; Pasqualina Sarro

doi:10.3390/proceedings1040559

Integrated SiGe Detectors for Si Photonic Sensor Platforms

Grégory Pandraud, Silvana Milosavljevic, Amir Sammak, Matteo Cherchi, Aleksandar Jovic, Pasqualina Sarro

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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Abstract

In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like Optical
Coherence Tomography.

Original language	English
Title of host publication	Proceedings of Eurosensors 2017
Pages	1-5
Number of pages	5
DOIs	https://doi.org/10.3390/proceedings1040559
Publication status	Published - 2017
Event	Eurosensors 2017: 31st Conference - Paris, France Duration: 3 Sept 2017 → 6 Sept 2017 Conference number: 31 http://www.eurosensors2017.eu/

Publication series

Name	Proceedings
Publisher	MDPI
Number	4
Volume	1
ISSN (Print)	2504-3900

Conference

Conference	Eurosensors 2017
Country/Territory	France
City	Paris
Period	3/09/17 → 6/09/17
Internet address	http://www.eurosensors2017.eu/

Keywords

Si photonics
SiGe detectors
optical coherence tomography

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10.3390/proceedings1040559

proceedings-01-00559-v2 (1)Final published version, 0.99 MBLicence: CC BY

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@inproceedings{69084f5056084d01ab0371d97b6b16f7,

title = "Integrated SiGe Detectors for Si Photonic Sensor Platforms",

abstract = "In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like OpticalCoherence Tomography. ",

keywords = " Si photonics, SiGe detectors, optical coherence tomography",

author = "Gr{\'e}gory Pandraud and Silvana Milosavljevic and Amir Sammak and Matteo Cherchi and Aleksandar Jovic and Pasqualina Sarro",

year = "2017",

doi = "10.3390/proceedings1040559",

language = "English",

series = "Proceedings",

publisher = "MDPI",

number = "4",

pages = "1--5",

booktitle = "Proceedings of Eurosensors 2017",

note = "Eurosensors 2017 : 31st Conference ; Conference date: 03-09-2017 Through 06-09-2017",

url = "http://www.eurosensors2017.eu/",

}

TY - GEN

T1 - Integrated SiGe Detectors for Si Photonic Sensor Platforms

AU - Pandraud, Grégory

AU - Milosavljevic, Silvana

AU - Sammak, Amir

AU - Cherchi, Matteo

AU - Jovic, Aleksandar

AU - Sarro, Pasqualina

N1 - Conference code: 31

PY - 2017

Y1 - 2017

N2 - In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like OpticalCoherence Tomography.

AB - In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like OpticalCoherence Tomography.

KW - Si photonics

KW - SiGe detectors

KW - optical coherence tomography

UR - http://www.mdpi.com/2504-3900/1/4/559

UR - http://resolver.tudelft.nl/uuid:69084f50-5608-4d01-ab03-71d97b6b16f7

U2 - 10.3390/proceedings1040559

DO - 10.3390/proceedings1040559

M3 - Conference contribution

T3 - Proceedings

SP - 1

EP - 5

BT - Proceedings of Eurosensors 2017

T2 - Eurosensors 2017

Y2 - 3 September 2017 through 6 September 2017

ER -

Integrated SiGe Detectors for Si Photonic Sensor Platforms

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