TY - JOUR
T1 - Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readout
AU - Fogarty, M. A.
AU - Chan, K. W.
AU - Hensen, B.
AU - Huang, W.
AU - Tanttu, T.
AU - Yang, C. H.
AU - Laucht, A.
AU - Veldhorst, M.
AU - Hudson, F. E.
AU - Itoh, K. M.
AU - More Authors, null
PY - 2018
Y1 - 2018
N2 - Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using 28Si enriched material. A scalable error-corrected quantum processor, however, will require control of many qubits in parallel, while performing error detection across the constituent qubits. Spin resonance techniques are a convenient path to parallel two-axis control, while Pauli spin blockade can be used to realize local parity measurements for error detection. Despite this, silicon qubit implementations have so far focused on either single-spin resonance control, or control and measurement via voltage-pulse detuning in the two-spin singlet-triplet basis, but not both simultaneously. Here, we demonstrate an integrated device platform incorporating a silicon metal-oxide-semiconductor double quantum dot that is capable of single-spin addressing and control via electron spin resonance, combined with high-fidelity spin readout in the singlet-triplet basis.
AB - Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using 28Si enriched material. A scalable error-corrected quantum processor, however, will require control of many qubits in parallel, while performing error detection across the constituent qubits. Spin resonance techniques are a convenient path to parallel two-axis control, while Pauli spin blockade can be used to realize local parity measurements for error detection. Despite this, silicon qubit implementations have so far focused on either single-spin resonance control, or control and measurement via voltage-pulse detuning in the two-spin singlet-triplet basis, but not both simultaneously. Here, we demonstrate an integrated device platform incorporating a silicon metal-oxide-semiconductor double quantum dot that is capable of single-spin addressing and control via electron spin resonance, combined with high-fidelity spin readout in the singlet-triplet basis.
UR - http://www.scopus.com/inward/record.url?scp=85055615479&partnerID=8YFLogxK
U2 - 10.1038/s41467-018-06039-x
DO - 10.1038/s41467-018-06039-x
M3 - Article
C2 - 30375392
SN - 2041-1723
VL - 9
JO - Nature Communications
JF - Nature Communications
IS - 1
ER -