Integrated Waveguide Power Combiners with Artificial dielectrics for mm-Wave Systems

Zhebin Hu, Maria Alonso-delPino, Daniele Cavallo, Harshitha Thippur Shivamurthy, Marco Spirito

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

1 Citation (Scopus)


In this contribution we present a new class of N:1 power combiner based on synthetic waveguides integrated in silicon technologies back-end-of-line. The input feeding is based on (N) E field probes employing capacitive resonance, feeding a waveguide with artificial dielectrics (ADs). The signal summation occurs on a single transverse plane, thus providing insertion losses which do not scale with the number of inputs. This results in a combiner more compact and without restriction in the number of inputs compared to the traditional power of two (2N) combiners. The power combiner operation is presented in a BiCMOS technology implementation and analyzed by means of full wave electromagnetic (EM) simulations. Finally, the experimental results of an integrated 4:1 back-to-back-combiner operating in the 240-310GHz band is presented and compared with the full EM model.
Original languageEnglish
Title of host publication2017 IEEE MTT-S International Microwave Symposium (IMS)
Place of PublicationPiscataway, NJ
Number of pages4
ISBN (Electronic)978-1-5090-6360-4
Publication statusPublished - 2017
EventIEEE MTT-S International Microwave Symposium, IMS 2017: Connecting Minds. Exchanging Ideas - Hawaii Convention Center, Honolulu, HI, United States
Duration: 4 Jun 20179 Jun 2017


ConferenceIEEE MTT-S International Microwave Symposium, IMS 2017
Abbreviated titleIMS 2017
Country/TerritoryUnited States
CityHonolulu, HI
Internet address


  • dielectric materials
  • elemental semiconductors
  • power combiners
  • silicon
  • waveguides
  • BiCMOS technology implementation
  • E field probes
  • N:1 power combiner
  • Si
  • artificial dielectrics
  • back-end-of-line
  • back-to-back-combiner operation
  • capacitive resonance
  • frequency 240.0 GHz to 310.0 GHz
  • full wave EM simulations
  • full-wave electromagnetic simulations
  • input feeding
  • insertion losses
  • integrated waveguide power combiners
  • mm-wave systems
  • power combiner operation
  • signal summation
  • silicon technologies
  • single transverse plane
  • synthetic waveguides
  • BiCMOS integrated circuits
  • Impedance
  • Pins
  • Power combiners
  • Probes
  • Prototypes
  • (sub)millimeter-wave
  • BiCMOS
  • Integrated circuit
  • artificial dielectric
  • power combiner
  • waveguide


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