Integration of MOSFETs with SiGe dots as stressor material

LK Nanver; V Jovanovic; C Biasotto; J Moers; D Gruetzmacher; JJ Zhang; N Hrauda; M Stoffel; F Pezzoli; OG Schmidt; L Miglio; H Kosina; A Marzegalli; G Vastola; G Mussler; J Stangl; G Bauer; J van der Cingel; E Bonera

doi:10.1016/j.sse.2011.01.038

Integration of MOSFETs with SiGe dots as stressor material

LK Nanver, V Jovanovic, C Biasotto, J Moers, D Gruetzmacher, JJ Zhang, N Hrauda, M Stoffel, F Pezzoli, OG Schmidt, L Miglio, H Kosina, A Marzegalli, G Vastola, G Mussler, J Stangl, G Bauer, J van der Cingel, E Bonera

Electronic Components, Technology and Materials

Research output: Contribution to journal › Article › Scientific › peer-review

15 Citations (Scopus)

Original language	English
Pages (from-to)	75-83
Number of pages	9
Journal	Solid-State Electronics
Volume	60
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2011.01.038
Publication status	Published - 2011

Keywords

academic journal papers
CWTS JFIS < 0.75

Access to Document

10.1016/j.sse.2011.01.038

Cite this

Nanver, LK., Jovanovic, V., Biasotto, C., Moers, J., Gruetzmacher, D., Zhang, JJ., Hrauda, N., Stoffel, M., Pezzoli, F., Schmidt, OG., Miglio, L., Kosina, H., Marzegalli, A., Vastola, G., Mussler, G., Stangl, J., Bauer, G., van der Cingel, J., & Bonera, E. (2011). Integration of MOSFETs with SiGe dots as stressor material. Solid-State Electronics, 60(1), 75-83. https://doi.org/10.1016/j.sse.2011.01.038

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author = "LK Nanver and V Jovanovic and C Biasotto and J Moers and D Gruetzmacher and JJ Zhang and N Hrauda and M Stoffel and F Pezzoli and OG Schmidt and L Miglio and H Kosina and A Marzegalli and G Vastola and G Mussler and J Stangl and G Bauer and {van der Cingel}, J and E Bonera",

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doi = "10.1016/j.sse.2011.01.038",

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Nanver, LK, Jovanovic, V, Biasotto, C, Moers, J, Gruetzmacher, D, Zhang, JJ, Hrauda, N, Stoffel, M, Pezzoli, F, Schmidt, OG, Miglio, L, Kosina, H, Marzegalli, A, Vastola, G, Mussler, G, Stangl, J, Bauer, G, van der Cingel, J & Bonera, E 2011, 'Integration of MOSFETs with SiGe dots as stressor material', Solid-State Electronics, vol. 60, no. 1, pp. 75-83. https://doi.org/10.1016/j.sse.2011.01.038

TY - JOUR

T1 - Integration of MOSFETs with SiGe dots as stressor material

AU - Nanver, LK

AU - Jovanovic, V

AU - Biasotto, C

AU - Moers, J

AU - Gruetzmacher, D

AU - Zhang, JJ

AU - Hrauda, N

AU - Stoffel, M

AU - Pezzoli, F

AU - Schmidt, OG

AU - Miglio, L

AU - Kosina, H

AU - Marzegalli, A

AU - Vastola, G

AU - Mussler, G

AU - Stangl, J

AU - Bauer, G

AU - van der Cingel, J

AU - Bonera, E

PY - 2011

Y1 - 2011

KW - academic journal papers

KW - CWTS JFIS < 0.75

U2 - 10.1016/j.sse.2011.01.038

DO - 10.1016/j.sse.2011.01.038

M3 - Article

SN - 0038-1101

VL - 60

SP - 75

EP - 83

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -