Interfacial Failure Characterization of Electronic Packaging Component Using a Multiscale Modelling Approach

Zhen Cui; Yingying Zhang; Qun Yang; Guoqi Zhang; Xianping Chen

doi:10.1109/EDTM.2018.8421434

Interfacial Failure Characterization of Electronic Packaging Component Using a Multiscale Modelling Approach

Zhen Cui, Yingying Zhang, Qun Yang, Guoqi Zhang, Xianping Chen^*

^*Corresponding author for this work

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

1 Citation (Scopus)

52 Downloads (Pure)

Abstract

Interfacial properties of Cu/SiO₂ in semiconductor devices has been a challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO₂. The Cu and SiO₂ are bonded by three types of chemical bonds, which cause three atomistic interfacial structures. The fracture of Cu-O and Cu-Si bonded interfaces occur at the interface, however, the fracture for Cu-OO interface occurs at copper layer near the interface, indicating two different fracture criterions coexist in Cu/SiO₂ system.

Original language	English
Title of host publication	Proceedings - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	68-70
Number of pages	3
ISBN (Electronic)	978-1-5386-3712-8
DOIs	https://doi.org/10.1109/EDTM.2018.8421434
Publication status	Published - 2018
Event	EDTM 2018: 2nd Electron Devices Technology and Manufacturing (EDTM) Conference - Kobe, Japan Duration: 13 Mar 2018 → 16 Mar 2018 Conference number: 2 http://ewh.ieee.org/conf/edtm/2018/

Conference

Conference	EDTM 2018
Country/Territory	Japan
City	Kobe
Period	13/03/18 → 16/03/18
Internet address	http://ewh.ieee.org/conf/edtm/2018/

Bibliographical note

Accepted author manuscript

Keywords

Load modeling
Loading
Substrates
Copper
Adhesives
Solid modeling
Computational modeling

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10.1109/EDTM.2018.8421434

46760510 - Interfacial Failure Characterization of Electronic Packaging Component Using a Multiscale Modelling ApproachAccepted author manuscript, 712 KB

Cite this

@inproceedings{4c742c25ad374392bb4b16b6a69c577e,

title = "Interfacial Failure Characterization of Electronic Packaging Component Using a Multiscale Modelling Approach",

abstract = "Interfacial properties of Cu/SiO2 in semiconductor devices has been a challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. The Cu and SiO2 are bonded by three types of chemical bonds, which cause three atomistic interfacial structures. The fracture of Cu-O and Cu-Si bonded interfaces occur at the interface, however, the fracture for Cu-OO interface occurs at copper layer near the interface, indicating two different fracture criterions coexist in Cu/SiO2 system.",

keywords = "Load modeling, Loading, Substrates, Copper, Adhesives, Solid modeling, Computational modeling",

author = "Zhen Cui and Yingying Zhang and Qun Yang and Guoqi Zhang and Xianping Chen",

note = "Accepted author manuscript; EDTM 2018 : 2nd Electron Devices Technology and Manufacturing (EDTM) Conference ; Conference date: 13-03-2018 Through 16-03-2018",

year = "2018",

doi = "10.1109/EDTM.2018.8421434",

language = "English",

pages = "68--70",

booktitle = "Proceedings - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018",

publisher = "IEEE",

address = "United States",

url = "http://ewh.ieee.org/conf/edtm/2018/",

}

Cui, Z, Zhang, Y, Yang, Q, Zhang, G & Chen, X 2018, Interfacial Failure Characterization of Electronic Packaging Component Using a Multiscale Modelling Approach. in Proceedings - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018., 8421434, IEEE, Piscataway, NJ, pp. 68-70, EDTM 2018, Kobe, Japan, 13/03/18. https://doi.org/10.1109/EDTM.2018.8421434

Interfacial Failure Characterization of Electronic Packaging Component Using a Multiscale Modelling Approach. / Cui, Zhen; Zhang, Yingying; Yang, Qun et al.
Proceedings - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018. Piscataway, NJ: IEEE, 2018. p. 68-70 8421434.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Interfacial Failure Characterization of Electronic Packaging Component Using a Multiscale Modelling Approach

AU - Cui, Zhen

AU - Zhang, Yingying

AU - Yang, Qun

AU - Zhang, Guoqi

AU - Chen, Xianping

N1 - Conference code: 2

PY - 2018

Y1 - 2018

N2 - Interfacial properties of Cu/SiO2 in semiconductor devices has been a challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. The Cu and SiO2 are bonded by three types of chemical bonds, which cause three atomistic interfacial structures. The fracture of Cu-O and Cu-Si bonded interfaces occur at the interface, however, the fracture for Cu-OO interface occurs at copper layer near the interface, indicating two different fracture criterions coexist in Cu/SiO2 system.

AB - Interfacial properties of Cu/SiO2 in semiconductor devices has been a challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. The Cu and SiO2 are bonded by three types of chemical bonds, which cause three atomistic interfacial structures. The fracture of Cu-O and Cu-Si bonded interfaces occur at the interface, however, the fracture for Cu-OO interface occurs at copper layer near the interface, indicating two different fracture criterions coexist in Cu/SiO2 system.

KW - Load modeling

KW - Loading

KW - Substrates

KW - Copper

KW - Adhesives

KW - Solid modeling

KW - Computational modeling

UR - http://www.scopus.com/inward/record.url?scp=85051566676&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2018.8421434

DO - 10.1109/EDTM.2018.8421434

M3 - Conference contribution

AN - SCOPUS:85051566676

SP - 68

EP - 70

BT - Proceedings - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018

PB - IEEE

CY - Piscataway, NJ

T2 - EDTM 2018

Y2 - 13 March 2018 through 16 March 2018

ER -

Interfacial Failure Characterization of Electronic Packaging Component Using a Multiscale Modelling Approach

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Keywords

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