International technology roadmap for wide band-gap power semiconductor ITRW

Braham Ferreira*

*Corresponding author for this work

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

1 Citation (Scopus)

Abstract

Wide band-gap devices are highly suitable to harsh working conditions such as high voltage, high temperature, high frequency, and high radiation exposure. The working voltage can reach as high as 10,000 volt, while the heat flux can exceed 1 *107 W/m2, which is far beyond the realm of Si devices. Applications include spaceship, airplane, high speed train, ocean oil drilling platform, EV /HEV and intelligent manufacturing. Application areas of internet of things (loT) require new technologies such as power electronics, RF devices and solid state lighting.
Original languageEnglish
Title of host publication3D-PEIM 2016
Subtitle of host publication1st International Symposium on 3D Power Electronics Integration and Manufacturing
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages1-13
Number of pages13
ISBN (Electronic)978-1-5090-2940-2
DOIs
Publication statusPublished - 2016
Event3D - PEIM 2016: 1st International Symposium on 3D Power Electronics Integration and Manufacturing - McKimmon Center, Raleigh, NC, United States
Duration: 13 Jun 201615 Jun 2016
Conference number: 1
http://www.3d-peim.org/3d-peim-2016/

Conference

Conference3D - PEIM 2016
CountryUnited States
CityRaleigh, NC
Period13/06/1615/06/16
Internet address

Keywords

  • Photonic band gap
  • Manufacturing
  • Benchmark testing
  • Reliability

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