Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress

Shaogang  Wang; Yanlong  Tan; Xu  Liu; Shizhen Li; Ke  Liu; Wucheng  Yuan; Tao Li; Guoqi Zhang; Paddy French; Huaiyu Ye; Chunjian  Tan

doi:10.1109/ICEPT59018.2023.10492291

Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress

Shaogang Wang, Yanlong Tan, Xu Liu, Shizhen Li, Ke Liu, Wucheng Yuan, Tao Li, Guoqi Zhang, Paddy French, Huaiyu Ye, Chunjian Tan

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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Abstract

In this article, the avalanche withstand capability and transient failure model of commercial 1200 V asymmetric trench gate SiC MOSFETs are investigated by experiment and simulation under single-pulse unclamped inductive switching (UIS) conditions. The limiting avalanche current and limiting avalanche energy of the device are determined by evaluating the voltage and current waveforms, the power dissipation, and the avalanche energy curves before and during avalanche failure. Then, by using the calibrated simulation model, the sequence between the critical electric field stress and critical thermal stress suffered by the device is revealed, and the transient failure mode of the device is proved to be the thermal runaway. Moreover, after decapping the failed device, the failure mode of the device is further confirmed by analyzing the failure point. Finally, by using the focused ion beam (FIB) technology, the failure mechanism of the device is confirmed as a structural rupture caused by avalanche thermal stress.

Original language	English
Title of host publication	Proceedings of the 2023 24th International Conference on Electronic Packaging Technology (ICEPT)
Publisher	IEEE
Number of pages	6
ISBN (Electronic)	979-8-3503-3881-2
ISBN (Print)	979-8-3503-3882-9
DOIs	https://doi.org/10.1109/ICEPT59018.2023.10492291
Publication status	Published - 2023
Event	2023 24th International Conference on Electronic Packaging Technology (ICEPT) - Shihezi City, China Duration: 8 Aug 2023 → 11 Aug 2023

Publication series

Name	2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023

Conference

Conference	2023 24th International Conference on Electronic Packaging Technology (ICEPT)
Country/Territory	China
City	Shihezi City
Period	8/08/23 → 11/08/23

Bibliographical note

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

unclamped inductive switching (UIS)
silicon carbide (SiC)
avalanche breakdown
asymmetric trench gate

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10.1109/ICEPT59018.2023.10492291

Investigation_on_Transient_Failure_Mode_of_Asymmetric_Trench_Gate_SiC_MOSFET_Under_Single-Pulse_Avalanche_StressFinal published version, 2.36 MB

Cite this

Wang, S., Tan, Y., Liu, X., Li, S., Liu, K., Yuan, W., Li, T., Zhang, G., French, P., Ye, H., & Tan, C. (2023). Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress. In Proceedings of the 2023 24th International Conference on Electronic Packaging Technology (ICEPT) (2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023). IEEE. https://doi.org/10.1109/ICEPT59018.2023.10492291

@inproceedings{814dfd77e27d40e88a8d175dbed4ff94,

title = "Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress",

abstract = "In this article, the avalanche withstand capability and transient failure model of commercial 1200 V asymmetric trench gate SiC MOSFETs are investigated by experiment and simulation under single-pulse unclamped inductive switching (UIS) conditions. The limiting avalanche current and limiting avalanche energy of the device are determined by evaluating the voltage and current waveforms, the power dissipation, and the avalanche energy curves before and during avalanche failure. Then, by using the calibrated simulation model, the sequence between the critical electric field stress and critical thermal stress suffered by the device is revealed, and the transient failure mode of the device is proved to be the thermal runaway. Moreover, after decapping the failed device, the failure mode of the device is further confirmed by analyzing the failure point. Finally, by using the focused ion beam (FIB) technology, the failure mechanism of the device is confirmed as a structural rupture caused by avalanche thermal stress.",

keywords = "unclamped inductive switching (UIS), silicon carbide (SiC), avalanche breakdown, asymmetric trench gate",

author = "Shaogang Wang and Yanlong Tan and Xu Liu and Shizhen Li and Ke Liu and Wucheng Yuan and Tao Li and Guoqi Zhang and Paddy French and Huaiyu Ye and Chunjian Tan",

note = "Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.; 2023 24th International Conference on Electronic Packaging Technology (ICEPT) ; Conference date: 08-08-2023 Through 11-08-2023",

year = "2023",

doi = "10.1109/ICEPT59018.2023.10492291",

language = "English",

isbn = "979-8-3503-3882-9",

series = "2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023",

publisher = "IEEE",

booktitle = "Proceedings of the 2023 24th International Conference on Electronic Packaging Technology (ICEPT)",

address = "United States",

}

Wang, S, Tan, Y, Liu, X, Li, S, Liu, K, Yuan, W, Li, T, Zhang, G , French, P, Ye, H & Tan, C 2023, Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress. in Proceedings of the 2023 24th International Conference on Electronic Packaging Technology (ICEPT). 2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023, IEEE, 2023 24th International Conference on Electronic Packaging Technology (ICEPT), Shihezi City, China, 8/08/23. https://doi.org/10.1109/ICEPT59018.2023.10492291

Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress. / Wang, Shaogang ; Tan, Yanlong ; Liu, Xu et al.
Proceedings of the 2023 24th International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2023. (2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress

AU - Wang, Shaogang

AU - Tan, Yanlong

AU - Liu, Xu

AU - Li, Shizhen

AU - Liu, Ke

AU - Yuan, Wucheng

AU - Li, Tao

AU - Zhang, Guoqi

AU - French, Paddy

AU - Ye, Huaiyu

AU - Tan, Chunjian

N1 - Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

PY - 2023

Y1 - 2023

N2 - In this article, the avalanche withstand capability and transient failure model of commercial 1200 V asymmetric trench gate SiC MOSFETs are investigated by experiment and simulation under single-pulse unclamped inductive switching (UIS) conditions. The limiting avalanche current and limiting avalanche energy of the device are determined by evaluating the voltage and current waveforms, the power dissipation, and the avalanche energy curves before and during avalanche failure. Then, by using the calibrated simulation model, the sequence between the critical electric field stress and critical thermal stress suffered by the device is revealed, and the transient failure mode of the device is proved to be the thermal runaway. Moreover, after decapping the failed device, the failure mode of the device is further confirmed by analyzing the failure point. Finally, by using the focused ion beam (FIB) technology, the failure mechanism of the device is confirmed as a structural rupture caused by avalanche thermal stress.

AB - In this article, the avalanche withstand capability and transient failure model of commercial 1200 V asymmetric trench gate SiC MOSFETs are investigated by experiment and simulation under single-pulse unclamped inductive switching (UIS) conditions. The limiting avalanche current and limiting avalanche energy of the device are determined by evaluating the voltage and current waveforms, the power dissipation, and the avalanche energy curves before and during avalanche failure. Then, by using the calibrated simulation model, the sequence between the critical electric field stress and critical thermal stress suffered by the device is revealed, and the transient failure mode of the device is proved to be the thermal runaway. Moreover, after decapping the failed device, the failure mode of the device is further confirmed by analyzing the failure point. Finally, by using the focused ion beam (FIB) technology, the failure mechanism of the device is confirmed as a structural rupture caused by avalanche thermal stress.

KW - unclamped inductive switching (UIS)

KW - silicon carbide (SiC)

KW - avalanche breakdown

KW - asymmetric trench gate

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U2 - 10.1109/ICEPT59018.2023.10492291

DO - 10.1109/ICEPT59018.2023.10492291

M3 - Conference contribution

SN - 979-8-3503-3882-9

T3 - 2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023

BT - Proceedings of the 2023 24th International Conference on Electronic Packaging Technology (ICEPT)

PB - IEEE

T2 - 2023 24th International Conference on Electronic Packaging Technology (ICEPT)

Y2 - 8 August 2023 through 11 August 2023

ER -

Wang S, Tan Y, Liu X, Li S, Liu K, Yuan W et al. Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress. In Proceedings of the 2023 24th International Conference on Electronic Packaging Technology (ICEPT). IEEE. 2023. (2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023). doi: 10.1109/ICEPT59018.2023.10492291

Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress

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