Investigations of bonding at an aluminium (III) oxide membrane in Si using ELNES separation

M. Stöger-Pollach, P. Schattschneider, J. Schneider, S. Gall, H. W. Zandbergen

    Research output: Chapter in Book/Conference proceedings/Edited volumeChapterScientific

    Abstract

    An A1203 membrane regulates layer growth in the aluminium induced layer exchange (ALILE) process that is used for seed layer growth on flat substrates for photovoltaic (PV) applications. Due to the use of the energy loss near edge structure (ELNES) separation method, we now are able to separate the signal of oxygen influenced and uninfluenced material in electron energy loss spectrometry (EELS). We show that the aluminium of the membrane can be found as aluminium (III) oxide and that the Si of the seed layer remains untouched by the oxygen.

    Original languageEnglish
    Title of host publicationMicroscopy of Semiconducting Materials 2003
    EditorsA.G. Cullis, P.A. Midgley
    PublisherCRC Press
    Pages401-404
    ISBN (Electronic)9781351083089
    ISBN (Print)0750309792, 9781315895536
    DOIs
    Publication statusPublished - 2018

    Publication series

    NameCRC Revivals
    PublisherTaylor & Francis Group

    Bibliographical note

    Hosttitle ' Microscopy of Semiconducting Materials 2003' (IOP) Reissued 2018 by CRC Press

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