Investigations of SiC VDMOSFET with Floating Island Structure Based on TCAD

INIS

• islands 100%
• investigations 100%
• silicon carbides 100%
• voltage 30%
• breakdown 30%
• reduction 20%
• simulation 20%
• thermal stresses 10%
• dynamics 10%
• power 10%
• short circuits 10%
• field effect transistors 10%
• capacity 10%
• distribution 10%
• values 10%
• oxides 10%
• interfaces 10%
• metals 10%
• semiconductor materials 10%
• devices 10%
• silicon oxides 10%
• concentration 10%
• length 10%
• electric fields 10%

Engineering

• Reduction 66%
• Power Device 33%
• Electric Field 33%
• Thermal Stress 33%
• Length (L) 33%
• Short Circuit Condition 33%
• Field Distribution 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 33%