Ion Assisted ETP-CVD a-Si:H at well defined ion energies

MA Wank; RACMM van Swaaij; M van der Sanden

doi:doi:10.1557/PROC-1153-A17-06

Ion Assisted ETP-CVD a-Si:H at well defined ion energies

MA Wank, RACMM van Swaaij, M van der Sanden

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Abstract

Hydrogenated amorphous silicon (a-Si:H) was deposited with the Expanding Thermal Plasma-CVD (ETP CVD) method utilizing pulse-shaped substrate biasing to induce controlled ion bombardment during film growth. The films are analyzed with in-situ real time spectroscopic ellispometry, FTIR spectroscopy, as well as reflection-transmission and Fourier transform photocurrent spectroscopy (FTPS) measurements. The aim of this work is to investigate the effect ion bombardment with well defined energy on the roughness evolution of the film and the material properties. We observe two separate energy regimes with material densification and relatively constant defect density below ~ 120-130 eV and a constant material density at increasing defect density > 120-130 eV substrate bias. We discuss our results in terms of possible ion ¿ surface atom interactions and relate our observations to reports in literature.

Original language	Undefined/Unknown
Title of host publication	Amorphous and polycrystalline thin-film science and technology 2009
Editors	A Flewitt, Q Wang, J Hou, S Uchikoga, A Nathan
Place of Publication	Warrendale
Publisher	Materials Research Society
Pages	1-6
Number of pages	6
ISBN (Print)	978-1-60511-126-1
DOIs	https://doi.org/doi:10.1557/PROC-1153-A17-06
Publication status	Published - 2009
Event	2009 MRS Spring meeting, Symposium A, San Francisco - Warrendale Duration: 13 Apr 2009 → 17 Apr 2009

Publication series

Name
Publisher	Materials Research Society

Name	Materials Research Society Symposium Proceedings
Volume	1153
ISSN (Print)	0272-9172

Conference

Conference	2009 MRS Spring meeting, Symposium A, San Francisco
Period	13/04/09 → 17/04/09

Bibliographical note

conference proceeding in tijdschrift/sb

Keywords

Conf.proc. > 3 pag

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

doi:10.1557/PROC-1153-A17-06

Cite this

Wank, MA., van Swaaij, RACMM., & van der Sanden, M. (2009). Ion Assisted ETP-CVD a-Si:H at well defined ion energies. In A. Flewitt, Q. Wang, J. Hou, S. Uchikoga, & A. Nathan (Eds.), Amorphous and polycrystalline thin-film science and technology 2009 (pp. 1-6). (Materials Research Society Symposium Proceedings; Vol. 1153). Materials Research Society. https://doi.org/doi:10.1557/PROC-1153-A17-06

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abstract = "Hydrogenated amorphous silicon (a-Si:H) was deposited with the Expanding Thermal Plasma-CVD (ETP CVD) method utilizing pulse-shaped substrate biasing to induce controlled ion bombardment during film growth. The films are analyzed with in-situ real time spectroscopic ellispometry, FTIR spectroscopy, as well as reflection-transmission and Fourier transform photocurrent spectroscopy (FTPS) measurements. The aim of this work is to investigate the effect ion bombardment with well defined energy on the roughness evolution of the film and the material properties. We observe two separate energy regimes with material densification and relatively constant defect density below ~ 120-130 eV and a constant material density at increasing defect density > 120-130 eV substrate bias. We discuss our results in terms of possible ion ¿ surface atom interactions and relate our observations to reports in literature.",

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Wank, MA, van Swaaij, RACMM & van der Sanden, M 2009, Ion Assisted ETP-CVD a-Si:H at well defined ion energies. in A Flewitt, Q Wang, J Hou, S Uchikoga & A Nathan (eds), Amorphous and polycrystalline thin-film science and technology 2009. Materials Research Society Symposium Proceedings, vol. 1153, Materials Research Society, Warrendale, pp. 1-6, 2009 MRS Spring meeting, Symposium A, San Francisco, 13/04/09. https://doi.org/doi:10.1557/PROC-1153-A17-06

Ion Assisted ETP-CVD a-Si:H at well defined ion energies. / Wank, MA; van Swaaij, RACMM; van der Sanden, M.
Amorphous and polycrystalline thin-film science and technology 2009. ed. / A Flewitt; Q Wang; J Hou; S Uchikoga; A Nathan. Warrendale: Materials Research Society, 2009. p. 1-6 (Materials Research Society Symposium Proceedings; Vol. 1153).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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T1 - Ion Assisted ETP-CVD a-Si:H at well defined ion energies

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AU - van Swaaij, RACMM

AU - van der Sanden, M

N1 - conference proceeding in tijdschrift/sb

PY - 2009

Y1 - 2009

N2 - Hydrogenated amorphous silicon (a-Si:H) was deposited with the Expanding Thermal Plasma-CVD (ETP CVD) method utilizing pulse-shaped substrate biasing to induce controlled ion bombardment during film growth. The films are analyzed with in-situ real time spectroscopic ellispometry, FTIR spectroscopy, as well as reflection-transmission and Fourier transform photocurrent spectroscopy (FTPS) measurements. The aim of this work is to investigate the effect ion bombardment with well defined energy on the roughness evolution of the film and the material properties. We observe two separate energy regimes with material densification and relatively constant defect density below ~ 120-130 eV and a constant material density at increasing defect density > 120-130 eV substrate bias. We discuss our results in terms of possible ion ¿ surface atom interactions and relate our observations to reports in literature.

AB - Hydrogenated amorphous silicon (a-Si:H) was deposited with the Expanding Thermal Plasma-CVD (ETP CVD) method utilizing pulse-shaped substrate biasing to induce controlled ion bombardment during film growth. The films are analyzed with in-situ real time spectroscopic ellispometry, FTIR spectroscopy, as well as reflection-transmission and Fourier transform photocurrent spectroscopy (FTPS) measurements. The aim of this work is to investigate the effect ion bombardment with well defined energy on the roughness evolution of the film and the material properties. We observe two separate energy regimes with material densification and relatively constant defect density below ~ 120-130 eV and a constant material density at increasing defect density > 120-130 eV substrate bias. We discuss our results in terms of possible ion ¿ surface atom interactions and relate our observations to reports in literature.

KW - Conf.proc. > 3 pag

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BT - Amorphous and polycrystalline thin-film science and technology 2009

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A2 - Wang, Q

A2 - Hou, J

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PB - Materials Research Society

CY - Warrendale

T2 - 2009 MRS Spring meeting, Symposium A, San Francisco

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Wank MA, van Swaaij RACMM, van der Sanden M. Ion Assisted ETP-CVD a-Si:H at well defined ion energies. In Flewitt A, Wang Q, Hou J, Uchikoga S, Nathan A, editors, Amorphous and polycrystalline thin-film science and technology 2009. Warrendale: Materials Research Society. 2009. p. 1-6. (Materials Research Society Symposium Proceedings). doi: doi:10.1557/PROC-1153-A17-06