Ionizing radiation modeling in DRAM transistors

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

1 Citation (Scopus)

Abstract

Electronics in space suffer from increased wear-out due to the accumulation of high concentrations of ionizing dose. The costs of a space mission in combination with the harsh space environment force space agencies to demand electronic components with extreme high reliability to guarantee mission success. One of the main reliability concerns for DRAM is the retention time degradation due to radiation, as radiation increases the Gate Induced Drain Leakage (GIDL). In this work we present a methodology to develop a Spice-based radiation model that could be used to simulate this retention time degradation. The model estimates the GIDL based on existing silicon measurements of the retention time and gives designers the opportunity to measure the impact of radiation during the design stage. Simulation results show a strong retention time degradation for small Total Ionizing Dose (TID) while this stabilizes with larger TID. The application of the model with space radiation environment data shows that the damage that spacecrafts suffer depends strongly on altitude and aging time.

Original languageEnglish
Title of host publication2018 IEEE 19th Latin-American Test Symposium, LATS 2018
PublisherIEEE
Pages1-6
Number of pages6
Volume2018-January
ISBN (Electronic)978-1-5386-1472-3
DOIs
Publication statusPublished - 2018
EventLATS 2018: 19th IEEE Latin-American Test Symposium - São Paulo, Brazil
Duration: 12 Mar 201816 Mar 2018
Conference number: 19

Conference

ConferenceLATS 2018
CountryBrazil
CitySão Paulo
Period12/03/1816/03/18

Keywords

  • DRAM
  • GIDL
  • Leakage
  • Radiation
  • Retention time

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