TY - JOUR
T1 - Josephson Effect in a Few-Hole Quantum Dot
AU - Ridderbos, Joost
AU - Brauns, Matthias
AU - Shen, Jie
AU - de Vries, Folkert K.
AU - Li, Ang
AU - Bakkers, Erik P.A.M.
AU - Brinkman, Alexander
AU - Zwanenburg, Floris A.
PY - 2018
Y1 - 2018
N2 - A Ge–Si core–shell nanowire is used to realize a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field, access to two distinct regimes, not combined before in a single device, is gained: in the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion, the supercurrent is carried by single-particle levels of a strongly coupled quantum dot operating in the few-hole regime. These results establish Ge–Si nanowires as an important platform for hybrid superconductor–semiconductor physics and Majorana fermions.
AB - A Ge–Si core–shell nanowire is used to realize a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field, access to two distinct regimes, not combined before in a single device, is gained: in the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion, the supercurrent is carried by single-particle levels of a strongly coupled quantum dot operating in the few-hole regime. These results establish Ge–Si nanowires as an important platform for hybrid superconductor–semiconductor physics and Majorana fermions.
KW - silicon quantum electronics
KW - superconductor–semiconductor hybrids
UR - http://www.scopus.com/inward/record.url?scp=85053034135&partnerID=8YFLogxK
U2 - 10.1002/adma.201802257
DO - 10.1002/adma.201802257
M3 - Article
AN - SCOPUS:85053034135
SN - 0935-9648
SP - 1
EP - 6
JO - Advanced Materials
JF - Advanced Materials
M1 - 1802257
ER -