Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

V Mohammadi; S Nihtianov

doi:10.1063/1.4941702

Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

V Mohammadi, S Nihtianov

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Abstract

The lateral gas phase diffusion length of boron atoms, L_B, along silicon and boron surfaces during chemical vapor deposition (CVD) using diborane (B₂H₆) is reported. The value of L_B is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the boron deposition temperature range from 700 °C down to 400 °C. For this temperature range the local loading effect of the boron deposition is investigated on the micro scale. A L_B = 2.2 mm was determined for boron deposition at 700 °C, while a L_B of less than 1 mm was observed at temperatures lower than 500 °C.

Original language	English
Pages (from-to)	025103-1-025103-8
Number of pages	8
Journal	AIP Advances
Volume	6
Issue number	2
DOIs	https://doi.org/10.1063/1.4941702
Publication status	Published - 2016

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abstract = "The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition (CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the boron deposition temperature range from 700 °C down to 400 °C. For this temperature range the local loading effect of the boron deposition is investigated on the micro scale. A LB = 2.2 mm was determined for boron deposition at 700 °C, while a LB of less than 1 mm was observed at temperatures lower than 500 °C.",

author = "V Mohammadi and S Nihtianov",

year = "2016",

doi = "10.1063/1.4941702",

language = "English",

volume = "6",

pages = "025103--1--025103--8",

journal = "AIP Advances",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

AU - Mohammadi, V

AU - Nihtianov, S

PY - 2016

Y1 - 2016

N2 - The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition (CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the boron deposition temperature range from 700 °C down to 400 °C. For this temperature range the local loading effect of the boron deposition is investigated on the micro scale. A LB = 2.2 mm was determined for boron deposition at 700 °C, while a LB of less than 1 mm was observed at temperatures lower than 500 °C.

AB - The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition (CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the boron deposition temperature range from 700 °C down to 400 °C. For this temperature range the local loading effect of the boron deposition is investigated on the micro scale. A LB = 2.2 mm was determined for boron deposition at 700 °C, while a LB of less than 1 mm was observed at temperatures lower than 500 °C.

UR - http://resolver.tudelft.nl/uuid:5fafb6be-0cd7-4d2b-a560-cd5e29ebccea

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DO - 10.1063/1.4941702

M3 - Article

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VL - 6

SP - 025103-1-025103-8

JO - AIP Advances

JF - AIP Advances

IS - 2

ER -

Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

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