Leakage current modeling of test structures for characterization of dark current in CMOS image sensors

NV Loukianova, H-O Folkerts, JPV Maas, DWE Verbugt, AJ Mierop, W Hoekstra, E Roks, AJP Theuwissen

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Pages (from-to)	77-83
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	50
Issue number	1
Publication status	Published - 2003

Keywords

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title = "Leakage current modeling of test structures for characterization of dark current in CMOS image sensors",

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T1 - Leakage current modeling of test structures for characterization of dark current in CMOS image sensors

AU - Loukianova, NV

AU - Folkerts, H-O

AU - Maas, JPV

AU - Verbugt, DWE

AU - Mierop, AJ

AU - Hoekstra, W

AU - Roks, E

AU - Theuwissen, AJP

PY - 2003

Y1 - 2003

KW - ZX CWTS 1.00 <= JFIS < 3.00

M3 - Article

VL - 50

SP - 77

EP - 83

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 1

ER -