Lightly strained germanium quantum wells with hole mobility exceeding one million

M. Lodari; O. Kong; M. Rendell; A. Tosato; A. Sammak; M. Veldhorst; A. R. Hamilton; G. Scappucci

doi:10.1063/5.0083161

Lightly strained germanium quantum wells with hole mobility exceeding one million

M. Lodari, O. Kong, M. Rendell, A. Tosato, A. Sammak, M. Veldhorst, A. R. Hamilton, G. Scappucci^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

We demonstrate that a lightly strained germanium channel (ϵ / / = - 0.41 %) in an undoped Ge/Si0.1Ge0.9 heterostructure field effect transistor supports a two-dimensional (2D) hole gas with mobility in excess of 1 × 10 6 cm2/Vs and percolation density less than 5 × 10 10 cm-2. This low disorder 2D hole system shows tunable fractional quantum Hall effects at low densities and low magnetic fields. The low-disorder and small effective mass (0.068 m e) defines lightly strained germanium as a basis to tune the strength of the spin-orbit coupling for fast and coherent quantum hardware.

Original language	English
Article number	122104
Number of pages	5
Journal	Applied Physics Letters
Volume	120
Issue number	12
DOIs	https://doi.org/10.1063/5.0083161
Publication status	Published - 2022

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@article{8770dc80017f4b76af173816e864c775,

title = "Lightly strained germanium quantum wells with hole mobility exceeding one million",

abstract = "We demonstrate that a lightly strained germanium channel (ϵ / / = - 0.41 %) in an undoped Ge/Si0.1Ge0.9 heterostructure field effect transistor supports a two-dimensional (2D) hole gas with mobility in excess of 1 × 10 6 cm2/Vs and percolation density less than 5 × 10 10 cm-2. This low disorder 2D hole system shows tunable fractional quantum Hall effects at low densities and low magnetic fields. The low-disorder and small effective mass (0.068 m e) defines lightly strained germanium as a basis to tune the strength of the spin-orbit coupling for fast and coherent quantum hardware. ",

author = "M. Lodari and O. Kong and M. Rendell and A. Tosato and A. Sammak and M. Veldhorst and Hamilton, {A. R.} and G. Scappucci",

year = "2022",

doi = "10.1063/5.0083161",

language = "English",

volume = "120",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Lightly strained germanium quantum wells with hole mobility exceeding one million

AU - Lodari, M.

AU - Kong, O.

AU - Rendell, M.

AU - Tosato, A.

AU - Sammak, A.

AU - Veldhorst, M.

AU - Hamilton, A. R.

AU - Scappucci, G.

PY - 2022

Y1 - 2022

N2 - We demonstrate that a lightly strained germanium channel (ϵ / / = - 0.41 %) in an undoped Ge/Si0.1Ge0.9 heterostructure field effect transistor supports a two-dimensional (2D) hole gas with mobility in excess of 1 × 10 6 cm2/Vs and percolation density less than 5 × 10 10 cm-2. This low disorder 2D hole system shows tunable fractional quantum Hall effects at low densities and low magnetic fields. The low-disorder and small effective mass (0.068 m e) defines lightly strained germanium as a basis to tune the strength of the spin-orbit coupling for fast and coherent quantum hardware.

AB - We demonstrate that a lightly strained germanium channel (ϵ / / = - 0.41 %) in an undoped Ge/Si0.1Ge0.9 heterostructure field effect transistor supports a two-dimensional (2D) hole gas with mobility in excess of 1 × 10 6 cm2/Vs and percolation density less than 5 × 10 10 cm-2. This low disorder 2D hole system shows tunable fractional quantum Hall effects at low densities and low magnetic fields. The low-disorder and small effective mass (0.068 m e) defines lightly strained germanium as a basis to tune the strength of the spin-orbit coupling for fast and coherent quantum hardware.

UR - http://www.scopus.com/inward/record.url?scp=85127457595&partnerID=8YFLogxK

U2 - 10.1063/5.0083161

DO - 10.1063/5.0083161

M3 - Article

AN - SCOPUS:85127457595

VL - 120

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 122104

ER -

Lightly strained germanium quantum wells with hole mobility exceeding one million

Abstract

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