Abstract
We demonstrate that a lightly strained germanium channel (ϵ / / = - 0.41 %) in an undoped Ge/Si0.1Ge0.9 heterostructure field effect transistor supports a two-dimensional (2D) hole gas with mobility in excess of 1 × 10 6 cm2/Vs and percolation density less than 5 × 10 10 cm-2. This low disorder 2D hole system shows tunable fractional quantum Hall effects at low densities and low magnetic fields. The low-disorder and small effective mass (0.068 m e) defines lightly strained germanium as a basis to tune the strength of the spin-orbit coupling for fast and coherent quantum hardware.
Original language | English |
---|---|
Article number | 122104 |
Number of pages | 5 |
Journal | Applied Physics Letters |
Volume | 120 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2022 |
Bibliographical note
Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-careOtherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
Fingerprint
Dive into the research topics of 'Lightly strained germanium quantum wells with hole mobility exceeding one million'. Together they form a unique fingerprint.Datasets
-
Lightly-strained germanium quantum wells with hole mobility exceeding one million
Lodari, M. (Creator), Scappucci, G. (Creator), Hamilton, A. R. (Creator), Kong, O. (Creator) & Rendell, M. J. (Creator), TU Delft - 4TU.ResearchData, 24 Dec 2021
DOI: 10.4121/17306906
Dataset/Software: Dataset