Lightly strained germanium quantum wells with hole mobility exceeding one million

M. Lodari, O. Kong, M. Rendell, A. Tosato, A. Sammak, M. Veldhorst, A. R. Hamilton, G. Scappucci*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

Abstract

We demonstrate that a lightly strained germanium channel (ϵ / / = - 0.41 %) in an undoped Ge/Si0.1Ge0.9 heterostructure field effect transistor supports a two-dimensional (2D) hole gas with mobility in excess of 1 × 10 6 cm2/Vs and percolation density less than 5 × 10 10 cm-2. This low disorder 2D hole system shows tunable fractional quantum Hall effects at low densities and low magnetic fields. The low-disorder and small effective mass (0.068 m e) defines lightly strained germanium as a basis to tune the strength of the spin-orbit coupling for fast and coherent quantum hardware.

Original languageEnglish
Article number122104
Number of pages5
JournalApplied Physics Letters
Volume120
Issue number12
DOIs
Publication statusPublished - 2022

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