Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process

C Tao; R Ishihara; W Metselaar; CIM Beenakker; MY Wu

Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process

C Tao, R Ishihara, W Metselaar, CIM Beenakker, MY Wu

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

10 Citations (Scopus)

Original language	Undefined/Unknown
Title of host publication	Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process
Editors	s.n.
Place of Publication	TOKYO
Publisher	INST PURE APPLIED PHYSICS
Pages	1880-1883
Number of pages	4
Publication status	Published - 2008
Event	14th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and Related materials (AM-FPD 07) - TOKYO Duration: 11 Jul 2007 → 13 Jul 2007

Publication series

Name
Publisher	INST PURE APPLIED PHYSICS

Name	Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres
Volume	47
ISSN (Print)	0021-4922

Conference

Conference	14th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and Related materials (AM-FPD 07)
Period	11/07/07 → 13/07/07

Keywords

academic journal papers
CWTS JFIS < 0.75

Cite this

Tao, C., Ishihara, R., Metselaar, W., Beenakker, CIM., & Wu, MY. (2008). Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process. In s.n. (Ed.), Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process (pp. 1880-1883). (Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres; Vol. 47). INST PURE APPLIED PHYSICS.

Tao, C ; Ishihara, R ; Metselaar, W et al. / Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process. Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process. editor / s.n. TOKYO : INST PURE APPLIED PHYSICS, 2008. pp. 1880-1883 (Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres).

@inproceedings{d82eddd0515340da9552eb011e9ca58d,

title = "Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process",

keywords = "academic journal papers, CWTS JFIS < 0.75",

author = "C Tao and R Ishihara and W Metselaar and CIM Beenakker and MY Wu",

year = "2008",

language = "Undefined/Unknown",

publisher = "INST PURE APPLIED PHYSICS",

pages = "1880--1883",

editor = "s.n.",

booktitle = "Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process",

note = "14th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and Related materials (AM-FPD 07) ; Conference date: 11-07-2007 Through 13-07-2007",

}

Tao, C, Ishihara, R, Metselaar, W, Beenakker, CIM & Wu, MY 2008, Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process. in s.n. (ed.), Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process. Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres, vol. 47, INST PURE APPLIED PHYSICS, TOKYO, pp. 1880-1883, 14th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and Related materials (AM-FPD 07), 11/07/07.

Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process. / Tao, C; Ishihara, R; Metselaar, W et al.
Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process. ed. / s.n. TOKYO: INST PURE APPLIED PHYSICS, 2008. p. 1880-1883 (Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres; Vol. 47).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process

AU - Tao, C

AU - Ishihara, R

AU - Metselaar, W

AU - Beenakker, CIM

AU - Wu, MY

PY - 2008

Y1 - 2008

KW - academic journal papers

KW - CWTS JFIS < 0.75

M3 - Conference contribution

SP - 1880

EP - 1883

BT - Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process

A2 - s.n., null

PB - INST PURE APPLIED PHYSICS

CY - TOKYO

T2 - 14th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and Related materials (AM-FPD 07)

Y2 - 11 July 2007 through 13 July 2007

ER -

Tao C, Ishihara R, Metselaar W, Beenakker CIM , Wu MY. Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process. In s.n., editor, Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process. TOKYO: INST PURE APPLIED PHYSICS. 2008. p. 1880-1883. (Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres).