Location- and orientation-controlled (100) and (110) single-grain Si TFTs without seed substrate

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Original language	English
Pages (from-to)	2348-2352
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	9
DOIs	https://doi.org/10.1109/TED.2010.2055510
Publication status	Published - 2010

Keywords

@article{0fe925313b164cbbb8da3f6e38471f57,

title = "Location- and orientation-controlled (100) and (110) single-grain Si TFTs without seed substrate",

keywords = "CWTS 0.75 <= JFIS < 2.00",

author = "T Chen and R Ishihara and CIM Beenakker",

year = "2010",

doi = "10.1109/TED.2010.2055510",

language = "English",

volume = "57",

pages = "2348--2352",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "9",

}

TY - JOUR

T1 - Location- and orientation-controlled (100) and (110) single-grain Si TFTs without seed substrate

AU - Chen, T

AU - Ishihara, R

AU - Beenakker, CIM

PY - 2010

Y1 - 2010

KW - CWTS 0.75 <= JFIS < 2.00

U2 - 10.1109/TED.2010.2055510

DO - 10.1109/TED.2010.2055510

M3 - Article

SN - 0018-9383

VL - 57

SP - 2348

EP - 2352

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

ER -