Location- and orientation-controlled, large single grain silicon induced by pulsed excimer laser crystallization

MR Tajari Mofrad; R Ishihara; J van der Cingel; CIM Beenakker

doi:10.1109/RTP.2010.5623801

Location- and orientation-controlled, large single grain silicon induced by pulsed excimer laser crystallization

MR Tajari Mofrad, R Ishihara, J van der Cingel, CIM Beenakker

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	English
Title of host publication	Proceedings 18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP2010
Editors	B Lojek et al
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE
Pages	42-48
Number of pages	7
ISBN (Print)	978-1-4244-8393-3
DOIs	https://doi.org/10.1109/RTP.2010.5623801
Publication status	Published - 2010
Event	18th IEEE conference on advanced thermal processing of semiconductors, Gainesville, FL, USA - Piscataway, NJ, USA Duration: 28 Sept 2010 → 1 Oct 2010

Publication series

Name
Publisher	IEEE

Conference

Conference	18th IEEE conference on advanced thermal processing of semiconductors, Gainesville, FL, USA
Period	28/09/10 → 1/10/10

Keywords

Conf.proc. > 3 pag

Access to Document

10.1109/RTP.2010.5623801

Cite this

Tajari Mofrad, MR., Ishihara, R., van der Cingel, J., & Beenakker, CIM. (2010). Location- and orientation-controlled, large single grain silicon induced by pulsed excimer laser crystallization. In B. Lojek et al (Ed.), Proceedings 18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP2010 (pp. 42-48). IEEE. https://doi.org/10.1109/RTP.2010.5623801

@inproceedings{c80764adead848e98f4ee19270174bc4,

title = "Location- and orientation-controlled, large single grain silicon induced by pulsed excimer laser crystallization",

keywords = "Conf.proc. > 3 pag",

author = "{Tajari Mofrad}, MR and R Ishihara and {van der Cingel}, J and CIM Beenakker",

year = "2010",

doi = "10.1109/RTP.2010.5623801",

language = "English",

isbn = "978-1-4244-8393-3",

publisher = "IEEE",

pages = "42--48",

editor = "{Lojek et al}, B",

booktitle = "Proceedings 18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP2010",

address = "United States",

note = "18th IEEE conference on advanced thermal processing of semiconductors, Gainesville, FL, USA ; Conference date: 28-09-2010 Through 01-10-2010",

}

Tajari Mofrad, MR, Ishihara, R , van der Cingel, J & Beenakker, CIM 2010, Location- and orientation-controlled, large single grain silicon induced by pulsed excimer laser crystallization. in B Lojek et al (ed.), Proceedings 18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP2010. IEEE, Piscataway, NJ, USA, pp. 42-48, 18th IEEE conference on advanced thermal processing of semiconductors, Gainesville, FL, USA, 28/09/10. https://doi.org/10.1109/RTP.2010.5623801

Location- and orientation-controlled, large single grain silicon induced by pulsed excimer laser crystallization. / Tajari Mofrad, MR; Ishihara, R ; van der Cingel, J et al.
Proceedings 18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP2010. ed. / B Lojek et al. Piscataway, NJ, USA: IEEE, 2010. p. 42-48.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Location- and orientation-controlled, large single grain silicon induced by pulsed excimer laser crystallization

AU - Tajari Mofrad, MR

AU - Ishihara, R

AU - van der Cingel, J

AU - Beenakker, CIM

PY - 2010

Y1 - 2010

KW - Conf.proc. > 3 pag

U2 - 10.1109/RTP.2010.5623801

DO - 10.1109/RTP.2010.5623801

M3 - Conference contribution

SN - 978-1-4244-8393-3

SP - 42

EP - 48

BT - Proceedings 18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP2010

A2 - Lojek et al, B

PB - IEEE

CY - Piscataway, NJ, USA

T2 - 18th IEEE conference on advanced thermal processing of semiconductors, Gainesville, FL, USA

Y2 - 28 September 2010 through 1 October 2010

ER -