Location of lanthanide impurity energy levels in the III¿V semiconductor AlxGa1-xN (0 <x <1)

Research output: Contribution to journalArticleScientificpeer-review

28 Citations (Scopus)
Original languageUndefined/Unknown
Pages (from-to)1052-1057
Number of pages6
JournalOptical Materials
Publication statusPublished - 2008

Keywords

  • CWTS 0.75 <= JFIS < 2.00

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