Location of lanthanide impurity energy levels in the III¿V semiconductor AlxGa1-xN (0 <x <1)

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Keywords

@article{5e0c2e3f9f2b4629b8a6c9cfbc514d9f,

title = "Location of lanthanide impurity energy levels in the III¿V semiconductor AlxGa1-xN (0 <x <1)",

keywords = "CWTS 0.75 <= JFIS < 2.00",

author = "P Dorenbos and {van der Kolk}, E",

year = "2008",

language = "Undefined/Unknown",

pages = "1052--1057",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier",

}