Longitudinal resistivity in the quantum Hall effect regime in a split-gate Si MOSFET with variable electron density

I Shlimak, KJ Friedland, SV Kravchenko, V Ginodman, A Butenko, TM Klapwijk

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	839-841
Number of pages	3
Journal	Physica Status Solidi. C: Current Topics in Solid State Physics
Volume	5
Issue number	3
Publication status	Published - 2008

Keywords

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title = "Longitudinal resistivity in the quantum Hall effect regime in a split-gate Si MOSFET with variable electron density",

keywords = "academic journal papers, Geen BTA classificatie",

author = "I Shlimak and KJ Friedland and SV Kravchenko and V Ginodman and A Butenko and TM Klapwijk",

year = "2008",

language = "Undefined/Unknown",

volume = "5",

pages = "839--841",

journal = "Physica Status Solidi. C: Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley",

number = "3",

}

TY - JOUR

T1 - Longitudinal resistivity in the quantum Hall effect regime in a split-gate Si MOSFET with variable electron density

AU - Shlimak, I

AU - Friedland, KJ

AU - Kravchenko, SV

AU - Ginodman, V

AU - Butenko, A

AU - Klapwijk, TM

PY - 2008

Y1 - 2008

KW - academic journal papers

KW - Geen BTA classificatie

M3 - Article

SN - 1862-6351

VL - 5

SP - 839

EP - 841

JO - Physica Status Solidi. C: Current Topics in Solid State Physics

JF - Physica Status Solidi. C: Current Topics in Solid State Physics

IS - 3

ER -