Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation

Xuanwu Kang, Yue Sun, Yingkui Zheng, Ke Wei, Hao Wu, Yuanyuan Zhao, Xinyu Liu, Guoqi Zhang

Research output: Contribution to journalArticleScientificpeer-review

5 Downloads (Pure)

Abstract

In this brief, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with post-mesa nitridation process is reported, featuring a low damaged sidewall with extremely low leakage current. The fabricated SBD with a drift layer of 1 μm has achieved a very high ON/OFF current ratio (Iscriptscriptstyle ON/Iscriptscriptstyle OFF of 1012 with a low leakage current of ∼ 10-9 A/cm2@-10 V, high forward current density of 5.2 kA/cm2 at 3 V in dc, a low differential specific ON-resistance (Rscriptscriptstyle ONsp) of 0.3 m Ω cm2, and ideality factor of 1.04. In addition, a transmission-line-pulse (TLP) I-V test was carried out and 53 kA/cm2 at 30 V in pulsed measurement was obtained without device failure, exhibiting a great potential for high power applications.

Original languageEnglish
Article number9334400
Pages (from-to)1369-1373
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume68
Issue number3
DOIs
Publication statusPublished - 2021

Keywords

  • GaN
  • high forward current density
  • leakage
  • mesa
  • quasi
  • Schottky barrier diode (SBD)
  • transmission-line-pulse (TLP)
  • vertical.

Fingerprint

Dive into the research topics of 'Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation'. Together they form a unique fingerprint.

Cite this