Low-power 850 nm optoelectronic integrated circuit receiver fabricated in 65 nm complementary metal-oxide semiconductor technology

JS Youn, MJ Lee, KY Park, WS Kim, WY Choi

Research output: Contribution to journal › Article › Scientific › peer-review

8 Citations (Scopus)

Original language	English
Pages (from-to)	221-226
Number of pages	6
Journal	IET Circuits, Devices and Systems
Volume	9
Issue number	3
DOIs	https://doi.org/10.1049/iet-cds.2014.0250
Publication status	Published - 2015

Harvest

Access to Document

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title = "Low-power 850 nm optoelectronic integrated circuit receiver fabricated in 65 nm complementary metal-oxide semiconductor technology",

author = "JS Youn and MJ Lee and KY Park and WS Kim and WY Choi",

note = "Harvest",

year = "2015",

doi = "10.1049/iet-cds.2014.0250",

language = "English",

volume = "9",

pages = "221--226",

journal = "IET Circuits, Devices and Systems",

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publisher = "Institution of Engineering and Technology",

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TY - JOUR

T1 - Low-power 850 nm optoelectronic integrated circuit receiver fabricated in 65 nm complementary metal-oxide semiconductor technology

AU - Youn, JS

AU - Lee, MJ

AU - Park, KY

AU - Kim, WS

AU - Choi, WY

N1 - Harvest

PY - 2015

Y1 - 2015

U2 - 10.1049/iet-cds.2014.0250

DO - 10.1049/iet-cds.2014.0250

M3 - Article

SN - 1751-858X

VL - 9

SP - 221

EP - 226

JO - IET Circuits, Devices and Systems

JF - IET Circuits, Devices and Systems

IS - 3

ER -