Low-pressure chemical vapor deposition of pureB layers on silicon for p+n junction formation

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

Original language	English
Title of host publication	12th International Workshop on Junction Technology (IWJT 2012), Shanghai, China
Pages	113-116
Number of pages	4
DOIs	https://doi.org/10.1109/IWJT.2012.6212822
Publication status	Published - 2012

Keywords

@inproceedings{9b24f125b0554aa6be4956c06875c65c,

title = "Low-pressure chemical vapor deposition of pureB layers on silicon for p+n junction formation",

keywords = "Conf.proc. > 3 pag",

author = "KRC Mok and V Mohammadi and LK Nanver and \{De Boer\}, WB and AHG Vlooswijk",

year = "2012",

doi = "10.1109/IWJT.2012.6212822",

language = "English",

pages = "113--116",

booktitle = "12th International Workshop on Junction Technology (IWJT 2012), Shanghai, China",

}

TY - GEN

T1 - Low-pressure chemical vapor deposition of pureB layers on silicon for p+n junction formation

AU - Mok, KRC

AU - Mohammadi, V

AU - Nanver, LK

AU - De Boer, WB

AU - Vlooswijk, AHG

PY - 2012

Y1 - 2012

KW - Conf.proc. > 3 pag

U2 - 10.1109/IWJT.2012.6212822

DO - 10.1109/IWJT.2012.6212822

M3 - Conference contribution

SP - 113

EP - 116

BT - 12th International Workshop on Junction Technology (IWJT 2012), Shanghai, China

ER -