Low temperature, 400 °C, pure boron deposition: A solution for integration of high-performance Si photodetectors and CMOS circuits

V Mohammadi; S Nihtianov

doi:10.1109/ICSENS.2015.7370555

Low temperature, 400 °C, pure boron deposition: A solution for integration of high-performance Si photodetectors and CMOS circuits

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

Original language	English
Title of host publication	Proceedings of the 2015 IEEE SENSORS
Editors	S Tadigadapa, J Lee
Place of Publication	Piscataway
Publisher	IEEE
Pages	1-4
Number of pages	4
ISBN (Print)	978-1-4799-8202-8
DOIs	https://doi.org/10.1109/ICSENS.2015.7370555
Publication status	Published - 2015
Event	SENSORS 2015, Busan, South Korea - Piscataway Duration: 1 Nov 2015 → 4 Nov 2015

Publication series

Name
Publisher	IEEE

Conference

Conference	SENSORS 2015, Busan, South Korea
Period	1/11/15 → 4/11/15

Bibliographical note

harvest

Access to Document

10.1109/ICSENS.2015.7370555

Cite this

@inproceedings{9ebdc7c2ef204d53a2ba910a82ff0294,

title = "Low temperature, 400 °C, pure boron deposition: A solution for integration of high-performance Si photodetectors and CMOS circuits",

author = "V Mohammadi and S Nihtianov",

note = "harvest; SENSORS 2015, Busan, South Korea ; Conference date: 01-11-2015 Through 04-11-2015",

year = "2015",

doi = "10.1109/ICSENS.2015.7370555",

language = "English",

isbn = "978-1-4799-8202-8",

publisher = "IEEE",

pages = "1--4",

editor = "S Tadigadapa and J Lee",

booktitle = "Proceedings of the 2015 IEEE SENSORS",

address = "United States",

}

Low temperature, 400 °C, pure boron deposition: A solution for integration of high-performance Si photodetectors and CMOS circuits. / Mohammadi, V; Nihtianov, S.
Proceedings of the 2015 IEEE SENSORS. ed. / S Tadigadapa; J Lee. Piscataway: IEEE, 2015. p. 1-4.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Low temperature, 400 °C, pure boron deposition: A solution for integration of high-performance Si photodetectors and CMOS circuits

AU - Mohammadi, V

AU - Nihtianov, S

N1 - harvest

PY - 2015

Y1 - 2015

U2 - 10.1109/ICSENS.2015.7370555

DO - 10.1109/ICSENS.2015.7370555

M3 - Conference contribution

SN - 978-1-4799-8202-8

SP - 1

EP - 4

BT - Proceedings of the 2015 IEEE SENSORS

A2 - Tadigadapa, S

A2 - Lee, J

PB - IEEE

CY - Piscataway

T2 - SENSORS 2015, Busan, South Korea

Y2 - 1 November 2015 through 4 November 2015

ER -