Low temperature gateoxide process for n-channel SiGe Modulation Doped Field Effect Transistors

B Bozon, T Zijlstra, M Glueck, J Hersener, EWJM van der Drift, U König

Research output: Contribution to journal › Article › Scientific › peer-review

Cite this

@article{b492b69cb3854583bddae4b249aaac9f,

title = "Low temperature gateoxide process for n-channel SiGe Modulation Doped Field Effect Transistors",

author = "B Bozon and T Zijlstra and M Glueck and J Hersener and {van der Drift}, EWJM and U K{\"o}nig",

year = "1997",

language = "Undefined/Unknown",

volume = "82",

pages = "4611--4615",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

}