Luminescence and charge carrier trapping in YPO4:Bi

Roy Awater; Louise C. Niemeijer-Berghuijs; Pieter Dorenbos

doi:10.1016/j.optmat.2017.02.032

Luminescence and charge carrier trapping in YPO₄:Bi

Roy Awater, Louise C. Niemeijer-Berghuijs, Pieter Dorenbos

RST/Fundamental Aspects of Materials and Energy

Research output: Contribution to journal › Article › Scientific › peer-review

27 Citations (Scopus)

Abstract

YPO4 doped with Bi³⁺ and/or Tb³⁺ samples were prepared in air. X-ray excited luminescence measurements showed emission from isolated Bi³⁺ and Bi-pairs, and also emission from Bi²⁺ was observed. Based on the obtained spectroscopic data, the electron binding energies in the ground and excited states of Bi³⁺ and Bi²⁺ were placed inside the vacuum referred binding energy (VRBE) scheme, and this was used to explain the luminescence of bismuth doped YPO₄. The VRBE scheme and additional thermoluminescence glow curves show that bismuth can act both as electron and as hole trap in YPO₄.

Original language	English
Pages (from-to)	351-355
Number of pages	5
Journal	Optical Materials
Volume	66
DOIs	https://doi.org/10.1016/j.optmat.2017.02.032
Publication status	Published - Feb 2017

Keywords

Bi2+ Bi3+
Bi-pairs
YPO4
Electron trap
Hole trap

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10.1016/j.optmat.2017.02.032

Cite this

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title = "Luminescence and charge carrier trapping in YPO4:Bi",

abstract = "YPO4 doped with Bi3+ and/or Tb3+ samples were prepared in air. X-ray excited luminescence measurements showed emission from isolated Bi3+ and Bi-pairs, and also emission from Bi2+ was observed. Based on the obtained spectroscopic data, the electron binding energies in the ground and excited states of Bi3+ and Bi2+ were placed inside the vacuum referred binding energy (VRBE) scheme, and this was used to explain the luminescence of bismuth doped YPO4. The VRBE scheme and additional thermoluminescence glow curves show that bismuth can act both as electron and as hole trap in YPO4.",

keywords = "Bi2+ Bi3+, Bi-pairs, YPO4, Electron trap, Hole trap",

author = "Roy Awater and Niemeijer-Berghuijs, {Louise C.} and Pieter Dorenbos",

year = "2017",

month = feb,

doi = "10.1016/j.optmat.2017.02.032",

language = "English",

volume = "66",

pages = "351--355",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier",

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TY - JOUR

T1 - Luminescence and charge carrier trapping in YPO4:Bi

AU - Awater, Roy

AU - Niemeijer-Berghuijs, Louise C.

AU - Dorenbos, Pieter

PY - 2017/2

Y1 - 2017/2

N2 - YPO4 doped with Bi3+ and/or Tb3+ samples were prepared in air. X-ray excited luminescence measurements showed emission from isolated Bi3+ and Bi-pairs, and also emission from Bi2+ was observed. Based on the obtained spectroscopic data, the electron binding energies in the ground and excited states of Bi3+ and Bi2+ were placed inside the vacuum referred binding energy (VRBE) scheme, and this was used to explain the luminescence of bismuth doped YPO4. The VRBE scheme and additional thermoluminescence glow curves show that bismuth can act both as electron and as hole trap in YPO4.

AB - YPO4 doped with Bi3+ and/or Tb3+ samples were prepared in air. X-ray excited luminescence measurements showed emission from isolated Bi3+ and Bi-pairs, and also emission from Bi2+ was observed. Based on the obtained spectroscopic data, the electron binding energies in the ground and excited states of Bi3+ and Bi2+ were placed inside the vacuum referred binding energy (VRBE) scheme, and this was used to explain the luminescence of bismuth doped YPO4. The VRBE scheme and additional thermoluminescence glow curves show that bismuth can act both as electron and as hole trap in YPO4.

KW - Bi2+ Bi3+

KW - Bi-pairs

KW - YPO4

KW - Electron trap

KW - Hole trap

U2 - 10.1016/j.optmat.2017.02.032

DO - 10.1016/j.optmat.2017.02.032

M3 - Article

SN - 0925-3467

VL - 66

SP - 351

EP - 355

JO - Optical Materials

JF - Optical Materials

ER -