Material-Inversion Solid-Phase Epitaxy of p+ Si for Elevated Junctions

Y Civale; LK Nanver; H Schellevis

Material-Inversion Solid-Phase Epitaxy of p+ Si for Elevated Junctions

Y Civale, LK Nanver, H Schellevis

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

1 Citation (Scopus)

Original language	Undefined/Unknown
Title of host publication	Electrochemical Society Transactions, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment
Editors	P Timans
Place of Publication	Cancun, Mexico
Publisher	Electrochemical Society
Pages	97-103
Number of pages	7
ISBN (Print)	1-56677-502-7
Publication status	Published - 2006
Event	210th ElectroChemical Society Meeting - Cancun, Mexico Duration: 29 Oct 2006 → 3 Nov 2006

Publication series

Name
Publisher	ElectroChemical Society

Conference

Conference	210th ElectroChemical Society Meeting
Period	29/10/06 → 3/11/06

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

Cite this

@inproceedings{26ee2f23abc24141ac2294f0412a5ef5,

title = "Material-Inversion Solid-Phase Epitaxy of p+ Si for Elevated Junctions",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "Y Civale and LK Nanver and H Schellevis",

year = "2006",

language = "Undefined/Unknown",

isbn = "1-56677-502-7",

publisher = "Electrochemical Society",

pages = "97--103",

editor = "P Timans",

booktitle = "Electrochemical Society Transactions, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment",

note = "210th ElectroChemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

}

Civale, Y, Nanver, LK & Schellevis, H 2006, Material-Inversion Solid-Phase Epitaxy of p+ Si for Elevated Junctions. in P Timans (ed.), Electrochemical Society Transactions, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. Electrochemical Society, Cancun, Mexico, pp. 97-103, 210th ElectroChemical Society Meeting, 29/10/06.

Material-Inversion Solid-Phase Epitaxy of p+ Si for Elevated Junctions. / Civale, Y; Nanver, LK; Schellevis, H.
Electrochemical Society Transactions, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. ed. / P Timans. Cancun, Mexico: Electrochemical Society, 2006. p. 97-103.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Material-Inversion Solid-Phase Epitaxy of p+ Si for Elevated Junctions

AU - Civale, Y

AU - Nanver, LK

AU - Schellevis, H

PY - 2006

Y1 - 2006

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SN - 1-56677-502-7

SP - 97

EP - 103

BT - Electrochemical Society Transactions, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment

A2 - Timans, P

PB - Electrochemical Society

CY - Cancun, Mexico

T2 - 210th ElectroChemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -