Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cells

Maciej K. Stodolny; John Anker; Bart L.J. Geerligs; Gaby J.M. Janssen; Bas W.H. Van De Loo; Jimmy Melskens; Rudi Santbergen; Olindo Isabella; Jurriaan Schmitz; Martijn Lenes; Jan Marc Luchies; Wilhelmus M.M. Kessels; Ingrid Romijn

doi:10.1016/j.egypro.2017.09.250

Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cells

Maciej K. Stodolny, John Anker, Bart L.J. Geerligs, Gaby J.M. Janssen, Bas W.H. Van De Loo, Jimmy Melskens, Rudi Santbergen, Olindo Isabella, Jurriaan Schmitz, Martijn Lenes, Jan Marc Luchies, Wilhelmus M.M. Kessels, Ingrid Romijn

Photovoltaic Materials and Devices

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Abstract

We present a detailed material study of n⁺-type polysilicon (polySi) and its application as a carrier selective rear contact in a bifacial n-type solar cell comprising fire-through screen-printed metallization and 6" Cz wafers. The cells were manufactured with low-cost industrial process steps yielding V_ocs from 676 to 683 mV and J_scs above 39.4 mA/cm² indicating an efficiency potential of 22%. The aim of this study is to understand which material properties determine the performance of POCl₃-diffused (n-type) polySi-based passivating contacts and to find routes to improve its use for industrial PERPoly (Passivated Emitter Rear PolySi) cells from the point of view of throughput, performance, and bifacial application. This paper reports on correlations between the parameters used for low pressure chemical vapour deposition (LPCVD), annealing, and doping on optical, structural, and electronic properties of the polySi-based passivating contact and the subsequent influence on the solar cell parameters.

Original language	English
Pages (from-to)	635-642
Number of pages	8
Journal	Energy Procedia
Volume	124
DOIs	https://doi.org/10.1016/j.egypro.2017.09.250
Publication status	Published - 2017

Keywords

Bifacial
Carrier selective contact
industrial n-type solar cell
LPCVD
Passivating contact
Polysilicon

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10.1016/j.egypro.2017.09.250

1-s2.0-S1876610217341802-main(2)Final published version, 1.11 MBLicence: CC BY-NC-ND

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Stodolny, M. K., Anker, J., Geerligs, B. L. J., Janssen, G. J. M., Van De Loo, B. W. H., Melskens, J., Santbergen, R., Isabella, O., Schmitz, J., Lenes, M., Luchies, J. M., Kessels, W. M. M., & Romijn, I. (2017). Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cells. Energy Procedia, 124, 635-642. https://doi.org/10.1016/j.egypro.2017.09.250

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title = "Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cells",

abstract = "We present a detailed material study of n+-type polysilicon (polySi) and its application as a carrier selective rear contact in a bifacial n-type solar cell comprising fire-through screen-printed metallization and 6{"} Cz wafers. The cells were manufactured with low-cost industrial process steps yielding Vocs from 676 to 683 mV and Jscs above 39.4 mA/cm2 indicating an efficiency potential of 22%. The aim of this study is to understand which material properties determine the performance of POCl3-diffused (n-type) polySi-based passivating contacts and to find routes to improve its use for industrial PERPoly (Passivated Emitter Rear PolySi) cells from the point of view of throughput, performance, and bifacial application. This paper reports on correlations between the parameters used for low pressure chemical vapour deposition (LPCVD), annealing, and doping on optical, structural, and electronic properties of the polySi-based passivating contact and the subsequent influence on the solar cell parameters.",

keywords = "Bifacial, Carrier selective contact, industrial n-type solar cell, LPCVD, Passivating contact, Polysilicon",

author = "Stodolny, {Maciej K.} and John Anker and Geerligs, {Bart L.J.} and Janssen, {Gaby J.M.} and {Van De Loo}, {Bas W.H.} and Jimmy Melskens and Rudi Santbergen and Olindo Isabella and Jurriaan Schmitz and Martijn Lenes and Luchies, {Jan Marc} and Kessels, {Wilhelmus M.M.} and Ingrid Romijn",

year = "2017",

doi = "10.1016/j.egypro.2017.09.250",

language = "English",

volume = "124",

pages = "635--642",

journal = "Energy Procedia",

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publisher = "Elsevier",

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Stodolny, MK, Anker, J, Geerligs, BLJ, Janssen, GJM, Van De Loo, BWH, Melskens, J, Santbergen, R , Isabella, O, Schmitz, J, Lenes, M, Luchies, JM, Kessels, WMM & Romijn, I 2017, 'Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cells', Energy Procedia, vol. 124, pp. 635-642. https://doi.org/10.1016/j.egypro.2017.09.250

TY - JOUR

T1 - Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cells

AU - Stodolny, Maciej K.

AU - Anker, John

AU - Geerligs, Bart L.J.

AU - Janssen, Gaby J.M.

AU - Van De Loo, Bas W.H.

AU - Melskens, Jimmy

AU - Santbergen, Rudi

AU - Isabella, Olindo

AU - Schmitz, Jurriaan

AU - Lenes, Martijn

AU - Luchies, Jan Marc

AU - Kessels, Wilhelmus M.M.

AU - Romijn, Ingrid

PY - 2017

Y1 - 2017

N2 - We present a detailed material study of n+-type polysilicon (polySi) and its application as a carrier selective rear contact in a bifacial n-type solar cell comprising fire-through screen-printed metallization and 6" Cz wafers. The cells were manufactured with low-cost industrial process steps yielding Vocs from 676 to 683 mV and Jscs above 39.4 mA/cm2 indicating an efficiency potential of 22%. The aim of this study is to understand which material properties determine the performance of POCl3-diffused (n-type) polySi-based passivating contacts and to find routes to improve its use for industrial PERPoly (Passivated Emitter Rear PolySi) cells from the point of view of throughput, performance, and bifacial application. This paper reports on correlations between the parameters used for low pressure chemical vapour deposition (LPCVD), annealing, and doping on optical, structural, and electronic properties of the polySi-based passivating contact and the subsequent influence on the solar cell parameters.

AB - We present a detailed material study of n+-type polysilicon (polySi) and its application as a carrier selective rear contact in a bifacial n-type solar cell comprising fire-through screen-printed metallization and 6" Cz wafers. The cells were manufactured with low-cost industrial process steps yielding Vocs from 676 to 683 mV and Jscs above 39.4 mA/cm2 indicating an efficiency potential of 22%. The aim of this study is to understand which material properties determine the performance of POCl3-diffused (n-type) polySi-based passivating contacts and to find routes to improve its use for industrial PERPoly (Passivated Emitter Rear PolySi) cells from the point of view of throughput, performance, and bifacial application. This paper reports on correlations between the parameters used for low pressure chemical vapour deposition (LPCVD), annealing, and doping on optical, structural, and electronic properties of the polySi-based passivating contact and the subsequent influence on the solar cell parameters.

KW - Bifacial

KW - Carrier selective contact

KW - industrial n-type solar cell

KW - LPCVD

KW - Passivating contact

KW - Polysilicon

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U2 - 10.1016/j.egypro.2017.09.250

DO - 10.1016/j.egypro.2017.09.250

M3 - Conference article

AN - SCOPUS:85031917498

SN - 1876-6102

VL - 124

SP - 635

EP - 642

JO - Energy Procedia

JF - Energy Procedia

ER -

Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cells

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