INIS
piezoelectricity
100%
silicon
100%
acoustics
100%
transducers
100%
membranes
33%
substrates
33%
oxides
33%
metals
33%
semiconductor materials
33%
erbium sulfides
16%
ceramics
16%
pzt
16%
air
16%
finite element method
16%
lead zirconate titanate
16%
applications
16%
resonance
16%
simulation
16%
thickness
16%
range
16%
films
16%
layers
16%
ultrasonics
16%
integrated circuits
16%
performance
16%
modeling
16%
Engineering
Acoustic Intensity
100%
Maximization
100%
Transducer
100%
Piezoelectric
100%
Silicon Substrate
33%
Membrane
33%
Application
16%
Thickness
16%
CMOS Integrated Circuits
16%
Frequency Shift
16%
Phased Array
16%
Performance
16%
Complementary Metal-Oxide-Semiconductor
16%
Finite Element Modeling
16%
Ultrasonics
16%
Lead Zirconate
16%
Resonance Frequency
16%
Titanate
16%
Material Science
Silicon
100%
Piezoelectricity
100%
Membrane
40%
Complementary Metal-Oxide-Semiconductor Device
40%
Film
20%
Phased Array Ultrasonics
20%
Electronic Circuit
20%
Air
20%
Piezoelectric Ceramics
20%
Lead Zirconate Titanate
20%
Finite Element Modeling
20%
Chemical Engineering
Silicon
100%
Oxide Semiconductors
40%
Keyphrases
2D Phased Array
33%
Phased Array Ultrasonic
33%
PZT Film
33%
Physics
Piezoelectric Ceramics
16%