INIS
junctions
100%
electronegativity
100%
boron
100%
silicon
100%
heterojunctions
100%
electrons
25%
energy
25%
p-n junctions
25%
interfaces
25%
penetration depth
25%
ultraviolet radiation
25%
microelectronics
25%
quantum mechanics
25%
ionizing radiations
25%
chemical vapor deposition
25%
reviews
25%
industry
25%
modeling
25%
kev range
25%
photons
25%
Engineering
Mechanisms
100%
Nanometre
100%
Crystalline Silicon
100%
Development
66%
Shallower
66%
Energy Electron
33%
Experimental Result
33%
Penetration Depth
33%
Microelectronics
33%
Lower Energy
33%
Si Interface
33%
Photon Energy
33%
Material Science
Silicon
100%
Boron
100%
Amorphous Material
100%
Heterojunction
100%
Crystalline Material
100%
Chemical Vapor Deposition
25%
Detector
25%
Physics
Silicon
100%
Quantum Mechanics
25%