Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing

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Keywords

@article{9866d71735214bc9bac28423a964781d,

title = "Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing",

keywords = "academic journal papers, ZX CWTS 1.00 <= JFIS < 3.00",

author = "FC Voogt and R Ishihara and FD Tichelaar",

year = "2004",

language = "Undefined/Unknown",

volume = "95",

pages = "2873--2879",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "5",

}

TY - JOUR

T1 - Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing

AU - Voogt, FC

AU - Ishihara, R

AU - Tichelaar, FD

PY - 2004

Y1 - 2004

KW - academic journal papers

KW - ZX CWTS 1.00 <= JFIS < 3.00

M3 - Article

SN - 0021-8979

VL - 95

SP - 2873

EP - 2879

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -