Abstract
Memristive devices can be exploited for memory as well as logic operation paving the way for non von-Neumann Computation-In-Memory architectures. To validate the potential of such architectures accurate compact models for the memristive devices are required. As a standard device is not available, evaluating the performance of such an architecture is ambiguous. This paper proposes a flexible model for bipolar, filamentary switching, redox-based memristive devices. The model does catch both the device resistance ratio as well as the nonlinearity of the switching kinetics. It is used to perform design exploration for three memristive based circuit design (IMPLY, MAGIC and CRS) for computation-in-memory architectures.
Original language | English |
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Title of host publication | 2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Volume | 2019-May |
ISBN (Electronic) | 9781728103976 |
DOIs | |
Publication status | Published - 2019 |
Event | 2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019 - Sapporo, Japan Duration: 26 May 2019 → 29 May 2019 |
Conference
Conference | 2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019 |
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Country/Territory | Japan |
City | Sapporo |
Period | 26/05/19 → 29/05/19 |
Keywords
- Compact model
- CRS
- IMPLY
- Logic-in-memory
- MAGIC
- Memristor