Metal/silicon Schottky barrier lowering by RTCVD interface passivation

Q Ren, WD van Noort, LK Nanver, JW Slotboom

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

Original language	Undefined/Unknown
Title of host publication	Proceedings volume 2000-9
Editors	F Roozeboom
Place of Publication	Pennington, NJ
Publisher	The Electrochemical Society
Pages	161-166
Number of pages	6
ISBN (Print)	1-56677-274-5
Publication status	Published - 2000

Name
Publisher	the Electrochemical Society

Keywords

@inproceedings{a7dfbb47528b44e390b8a77d5cc40acb,

title = "Metal/silicon Schottky barrier lowering by RTCVD interface passivation",

keywords = "ZX Int.klas.verslagjaar < 2002",

author = "Q Ren and {van Noort}, WD and LK Nanver and JW Slotboom",

year = "2000",

language = "Undefined/Unknown",

isbn = "1-56677-274-5",

publisher = "The Electrochemical Society",

pages = "161--166",

editor = "{F Roozeboom}",

booktitle = "Proceedings volume 2000-9",

}

TY - GEN

T1 - Metal/silicon Schottky barrier lowering by RTCVD interface passivation

AU - Ren, Q

AU - van Noort, WD

AU - Nanver, LK

AU - Slotboom, JW

PY - 2000

Y1 - 2000

KW - ZX Int.klas.verslagjaar < 2002

M3 - Conference contribution

SN - 1-56677-274-5

SP - 161

EP - 166

BT - Proceedings volume 2000-9

A2 - F Roozeboom, null

PB - The Electrochemical Society

CY - Pennington, NJ

ER -