Original language | English |
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Patent number | US 9.595.437 |
IPC | C30B; H01L |
Priority date | 26/04/13 |
Publication status | Published - 2017 |
Method of forming silicon on a substrate
Michiel van der Zwan (Inventor), Ryoichi Ishihara (Inventor), Miki Trifunovic (Inventor)
Research output: Patent