Method of forming silicon on a substrate

Michiel van der Zwan (Inventor), Ryoichi Ishihara (Inventor), Miki Trifunovic (Inventor)

Research output: Patent

Original languageEnglish
Patent numberUS 9.595.437
IPCC30B; H01L
Priority date26/04/13
Publication statusPublished - 2017

Cite this

van der Zwan, M., Ishihara, R., & Trifunovic, M. (2017). IPC No. C30B; H01L. Method of forming silicon on a substrate. (Patent No. US 9.595.437).