Method of forming silicon on a substrate

Michiel van der Zwan (Inventor), Ryoichi Ishihara (Inventor), Miki Trifunovic (Inventor)

Research output: Patent

Original languageEnglish
Patent numberUS 9.595.437
IPCC30B; H01L
Priority date26/04/13
Publication statusPublished - 2017

Bibliographical note

OCT-13-002

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