MFA-MTJ Model: Magnetic-Field-Aware Compact Model of pMTJ for Robust STT-MRAM Design

Lizhou Wu, Siddharth Rao, Mottaqiallah Taouil, Erik Jan Marinissen, Gouri Sankar Kar, Said Hamdioui

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

The popularity of perpendicular magnetic tunnel junction (pMTJ) based STT-MRAMs is growing very fast. The performance of such memories is very sensitive to magnetic fields including both internal and external ones. This article presents a magnetic-field-aware compact model of pMTJ, named as MFA-MTJ model, for magnetic/electrical co-simulation of MTJ/CMOS circuits. Magnetic measurement data of MTJ devices, with diameters ranging from 35 nm to 175 nm, is used to calibrate an in-house magnetic coupling model. This model is subsequently integrated into our developed compact pMTJ model, which is implemented in Verilog-A. The superiority of the proposed MFA-MTJ model for device/circuit co-design of STT-MRAM is demonstrated by simulating a single pMTJ as well as STT-MRAM full circuits. The design space is explored under PVT variations and various configurations of magnetic fields.

Original languageEnglish
Number of pages14
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
DOIs
Publication statusE-pub ahead of print - 2022

Keywords

  • circuit simulation.
  • Integrated circuit modeling
  • Magnetic circuits
  • Magnetic devices
  • Magnetic tunneling
  • Magnetization
  • MTJ model
  • Resistance
  • STT-MRAM
  • Switches

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