MFA-MTJ Model: Magnetic-Field-Aware Compact Model of pMTJ for Robust STT-MRAM Design

Lizhou Wu, Siddharth Rao, Mottaqiallah Taouil, Erik Jan Marinissen, Gouri Sankar Kar, Said Hamdioui

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)
27 Downloads (Pure)


The popularity of perpendicular magnetic tunnel junction (pMTJ)-based spin-transfer torque magnetic random access memories (STT-MRAMs) is growing very fast. The performance of such memories is very sensitive to magnetic fields, including both internal and external ones. This article presents a magnetic-field-aware compact model of pMTJ, named the MFA-magnetic tunnel junction (MTJ) model, for magnetic/electrical co-simulation of MTJ/CMOS circuits. Magnetic measurement data of MTJ devices, with diameters ranging from 35 to 175 nm, are used to calibrate an in-house magnetic coupling model. This model is subsequently integrated into our developed compact pMTJ model, which is implemented in Verilog-A. The superiority of the proposed MFA-MTJ model for device/circuit co-design of STT-MRAM is demonstrated by simulating a single pMTJ as well as STT-MRAM full circuits. The design space is explored under PVT variations and various configurations of magnetic fields.

Original languageEnglish
Pages (from-to)4991-5004
Number of pages14
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Issue number11
Publication statusPublished - 2022

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.


  • circuit simulation.
  • Integrated circuit modeling
  • Magnetic circuits
  • Magnetic devices
  • Magnetic tunneling
  • Magnetization
  • MTJ model
  • Resistance
  • Switches


Dive into the research topics of 'MFA-MTJ Model: Magnetic-Field-Aware Compact Model of pMTJ for Robust STT-MRAM Design'. Together they form a unique fingerprint.

Cite this