MFA-MTJ Model: Magnetic-Field-Aware Compact Model of pMTJ for Robust STT-MRAM Design

Lizhou Wu; Siddharth Rao; Mottaqiallah Taouil; Erik Jan Marinissen; Gouri Sankar Kar; Said Hamdioui

doi:10.1109/TCAD.2021.3140157

MFA-MTJ Model: Magnetic-Field-Aware Compact Model of pMTJ for Robust STT-MRAM Design

Lizhou Wu, Siddharth Rao, Mottaqiallah Taouil, Erik Jan Marinissen, Gouri Sankar Kar, Said Hamdioui

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Abstract

The popularity of perpendicular magnetic tunnel junction (pMTJ)-based spin-transfer torque magnetic random access memories (STT-MRAMs) is growing very fast. The performance of such memories is very sensitive to magnetic fields, including both internal and external ones. This article presents a magnetic-field-aware compact model of pMTJ, named the MFA-magnetic tunnel junction (MTJ) model, for magnetic/electrical co-simulation of MTJ/CMOS circuits. Magnetic measurement data of MTJ devices, with diameters ranging from 35 to 175 nm, are used to calibrate an in-house magnetic coupling model. This model is subsequently integrated into our developed compact pMTJ model, which is implemented in Verilog-A. The superiority of the proposed MFA-MTJ model for device/circuit co-design of STT-MRAM is demonstrated by simulating a single pMTJ as well as STT-MRAM full circuits. The design space is explored under PVT variations and various configurations of magnetic fields.

Original language	English
Pages (from-to)	4991-5004
Number of pages	14
Journal	IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume	41
Issue number	11
DOIs	https://doi.org/10.1109/TCAD.2021.3140157
Publication status	Published - 2022

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

circuit simulation.
Integrated circuit modeling
Magnetic circuits
Magnetic devices
Magnetic tunneling
Magnetization
MTJ model
Resistance
STT-MRAM
Switches

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title = "MFA-MTJ Model: Magnetic-Field-Aware Compact Model of pMTJ for Robust STT-MRAM Design",

abstract = "The popularity of perpendicular magnetic tunnel junction (pMTJ)-based spin-transfer torque magnetic random access memories (STT-MRAMs) is growing very fast. The performance of such memories is very sensitive to magnetic fields, including both internal and external ones. This article presents a magnetic-field-aware compact model of pMTJ, named the MFA-magnetic tunnel junction (MTJ) model, for magnetic/electrical co-simulation of MTJ/CMOS circuits. Magnetic measurement data of MTJ devices, with diameters ranging from 35 to 175 nm, are used to calibrate an in-house magnetic coupling model. This model is subsequently integrated into our developed compact pMTJ model, which is implemented in Verilog-A. The superiority of the proposed MFA-MTJ model for device/circuit co-design of STT-MRAM is demonstrated by simulating a single pMTJ as well as STT-MRAM full circuits. The design space is explored under PVT variations and various configurations of magnetic fields.",

keywords = "circuit simulation., Integrated circuit modeling, Magnetic circuits, Magnetic devices, Magnetic tunneling, Magnetization, MTJ model, Resistance, STT-MRAM, Switches",

author = "Lizhou Wu and Siddharth Rao and Mottaqiallah Taouil and Marinissen, \{Erik Jan\} and Kar, \{Gouri Sankar\} and Said Hamdioui",

note = "Green Open Access added to TU Delft Institutional Repository {\textquoteleft}You share, we take care!{\textquoteright} – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. ",

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AU - Rao, Siddharth

AU - Taouil, Mottaqiallah

AU - Marinissen, Erik Jan

AU - Kar, Gouri Sankar

AU - Hamdioui, Said

N1 - Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

PY - 2022

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N2 - The popularity of perpendicular magnetic tunnel junction (pMTJ)-based spin-transfer torque magnetic random access memories (STT-MRAMs) is growing very fast. The performance of such memories is very sensitive to magnetic fields, including both internal and external ones. This article presents a magnetic-field-aware compact model of pMTJ, named the MFA-magnetic tunnel junction (MTJ) model, for magnetic/electrical co-simulation of MTJ/CMOS circuits. Magnetic measurement data of MTJ devices, with diameters ranging from 35 to 175 nm, are used to calibrate an in-house magnetic coupling model. This model is subsequently integrated into our developed compact pMTJ model, which is implemented in Verilog-A. The superiority of the proposed MFA-MTJ model for device/circuit co-design of STT-MRAM is demonstrated by simulating a single pMTJ as well as STT-MRAM full circuits. The design space is explored under PVT variations and various configurations of magnetic fields.

AB - The popularity of perpendicular magnetic tunnel junction (pMTJ)-based spin-transfer torque magnetic random access memories (STT-MRAMs) is growing very fast. The performance of such memories is very sensitive to magnetic fields, including both internal and external ones. This article presents a magnetic-field-aware compact model of pMTJ, named the MFA-magnetic tunnel junction (MTJ) model, for magnetic/electrical co-simulation of MTJ/CMOS circuits. Magnetic measurement data of MTJ devices, with diameters ranging from 35 to 175 nm, are used to calibrate an in-house magnetic coupling model. This model is subsequently integrated into our developed compact pMTJ model, which is implemented in Verilog-A. The superiority of the proposed MFA-MTJ model for device/circuit co-design of STT-MRAM is demonstrated by simulating a single pMTJ as well as STT-MRAM full circuits. The design space is explored under PVT variations and various configurations of magnetic fields.

KW - circuit simulation.

KW - Integrated circuit modeling

KW - Magnetic circuits

KW - Magnetic devices

KW - Magnetic tunneling

KW - Magnetization

KW - MTJ model

KW - Resistance

KW - STT-MRAM

KW - Switches

UR - https://www.scopus.com/pages/publications/85122584605

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JO - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

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IS - 11

ER -

MFA-MTJ Model: Magnetic-Field-Aware Compact Model of pMTJ for Robust STT-MRAM Design

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