Microwave-induced resistance oscillations in a back-gated GaAs quantum well

X. Fu, Q. A. Ebner, Q. Shi, M. A. Zudov*, Q. Qian, J. D. Watson, M. J. Manfra

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

15 Citations (Scopus)
29 Downloads (Pure)


We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in general agreement with earlier studies which investigated the density dependence of the effective mass employing Shubnikov-de Haas oscillations. This finding provides further evidence that microwave-induced resistance oscillations are sensitive to electron-electron interactions and offer a convenient and accurate way to obtain the effective mass.

Original languageEnglish
Article number235415
Number of pages4
JournalPhysical Review B
Issue number23
Publication statusPublished - 2017


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