Mixed Mode Bending Test for Interfacial Adhesion in Semiconductor Applications

J. Thijsse, WD van Driel, MAJ van Gils, O van der Sluis

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Abstract

Currently, prediction of interface strength is typically done using the critical energy release rate. Interface strength, however, is heavily dependent on mode mixity. Accurately predicting delamination therefore requires a material model that includes the mode dependency of interface strength. A novel test setup is designed which allows mixed mode delamination testing. The setup is a stabilized version of the mixed mode bending test previously described by Reeder and Crews [5.6]. It allows for the measurement of stable crack growth over the full range of mode mixities, using a single specimen design. The crack length, necessary for calculation of the energy release rate, is obtained from an analytical model. Crack length and displacement data are used in a finite element model containing a crack tip to calculate the mode mixity.
Original languageUndefined/Unknown
Title of host publicationProceedings 56th Electronic Components & Technology Conference 2006
Editors IEEE/ECTC
Place of PublicationSan Diego, CA, USA
PublisherIEEE Society
Pages1-5
Number of pages5
ISBN (Print)1-4244-0152-6
Publication statusPublished - 2006
Event56th Electronic Components & Technology Conference - San Diego, CA, USA
Duration: 30 May 20062 Jun 2006

Publication series

Name
PublisherIEEE

Conference

Conference56th Electronic Components & Technology Conference
Period30/05/062/06/06

Keywords

  • conference contrib. refereed
  • Conf.proc. > 3 pag

Cite this

Thijsse, J., van Driel, WD., van Gils, MAJ., & van der Sluis, O. (2006). Mixed Mode Bending Test for Interfacial Adhesion in Semiconductor Applications. In IEEE/ECTC (Ed.), Proceedings 56th Electronic Components & Technology Conference 2006 (pp. 1-5). IEEE Society.